Micron Technology Incorporated

Zixiang Loh

Patrick Robert Khayat

Sampath K Ratnam

Vamsi Pavan Rayaprolu

Mustafa Nazmi Kaynak

Shane G Nowell

Nagendra Prasad Ganesh Rao

Larry Joseph Koudele

Jun Wan

Steven Michael Kientz

Dung Viet Nguyen

HyungSeok Kim

Thomas Herbert Lentz

Larry K Koudele

A system having a processing device operatively coupled with a memory device to perform the following operations: responsive to detecting a triggering event, measuring a temperature of the memory device to obtain a suspend temperature value, enabling a suspend temperature flag to indicate that temperature input for a step of an error handling operation is based on the suspend temperature value. Updating an operating temperature with the suspend temperature value. Determining, using a data structure which maps temperatures to read level offsets, a read level offset for the step of the error handling operation, based on the operating temperature. Causing the step of the error handling operation to be performed on a set of cells using a read level value based on the read level offset and a base read level, an disabling the suspend temperature flag.

Temperature sensor management during error handling operations in a memory sub-system

A request to access data programmed to a memory sub-system is received. A determination is made of whether memory cells of the memory sub-system that store the programmed data satisfy one or more cell degradation criteria. In response to a determination that the memory cells satisfy the one or more cell degradation criteria, an error correction operation to access the data is performed in accordance with the request.

Accessing data using error correction operation(s) to reduce latency at a memory sub-system

A processing device, operatively coupled with a memory device, is configured to identify a temperature related to a memory device of a plurality of memory devices; to determine, whether the temperature satisfies a threshold temperature condition; responsive to detecting that the temperature related to the memory device satisfies the threshold temperature condition, to identify an entry associated with the memory device from a plurality of entries in a data structure, wherein each entry of the plurality of entries corresponds to one of the plurality of memory devices; to determine a parameter value associated with the memory device from the entry, wherein the parameter value is for a programming operation to store data at the memory device; to adjust the parameter value associated with the memory device to generate an adjusted parameter value; and to store the adjusted parameter value in the entry of the data structure.

Adjusting a parameter for a programming operation based on the temperature of a memory system

A temperature related to a memory device is identified. It is determined whether the temperature related to the memory device satisfies a threshold temperature condition. Responsive to detecting that the temperature related to the memory device satisfies the threshold temperature condition, a parameter for a programming operation is adjusted from a first value to a second value to store data at the memory device.

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Folsom, CA, United States of America

Zixiang Loh