Zecotek Imaging Systems Singapore Pte Ltd.

Zecotek Photonics Inc.

Ziraddin Yegub-Ogly Sadygov

Abdelmounaime Faouzi Zerrouk

Azar Sadygov

The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.

Microchannel avalanche photodiode (variants)

Semiconductor avalanche photo transistors and methods of manufacturing the same, operable for internal amplification of a photo signal and for use in detection of weak light signals, gamma rays and nuclear particles. The multi-pixel avalanche photo transistor devices can comprise a semiconductor layer, a plurality of semiconductor areas (pixels) forming a p-n-junction with the semiconductor layer, a common conductive grid separated from the semiconductor layer by a dielectric layer and individual micro-resistors connected to said semiconductor areas with the common conductive grid. Systems and methods described can be operable to decrease optical crosstalk at high signal amplification and the special capacity of the multi-pixel avalanche photo transistor, as well as improve speed of its photo response.

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Dubna, Russia

Ziraddin Yegub-Ogly Sadygov