Nanjing University

Zili Xie

Bin Liu

Rong Zhang

Xiangqian Xiu

Peng Chen

Xuan Wang

Ping Han

Youdou Zheng

Di Jiang

Danfeng Pan

Henan Fang

Yugang Zhou

Hong Zhao

Junchi Yu

Dunjun Chen

Xuemei Hua

A micro panchromatic QLED array device based on a quantum dot transfer process of deep silicon etching templates. Array-type square table structures pass through a p-type GaN layer and a quantum well active layer and are deep to an n-type GaN layer are disposed on a blue LED epitaxial wafer, wherein micro holes are formed through etching in the structures. Every 2*2 table structures constitute an RGB pixel unit. Among the four micro holes, three of the holes are filled with red light, green light and yellow light quantum dots respectively, and one of the holes emits blue light/is filled with a blue light quantum dot. Micro holes in a silicon wafer are formed through etching with a deep silicon etching technology; the micro holes in the silicon wafer are aligned with quantum dot filling areas on a micro-LED.

Micro panchromatic QLED array device based on quantum dot transfer process of deep silicon etching templates, and preparation method therefor

A kind of growth method of FeNin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCpas Fe sources, then grow FeN on the GaN supporting layer; the FeN granular films and the FeN single crystal films are obtained.

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Nanjing, China

Zili Xie