Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Shanghai Zhenhua Heavy Industries Company Limited

Zijian Zhao

Tao Wang

Wenjun Li

Yu Cheng

Wei Dai

Hao Ni

Qing Yi

Yao Lu

Tengye Wang

Lei Luo

Jianguo Shan

Jiaxu Peng

Yijin Kwon

Yunfu Yan

Maohua Fu

Jun Yu

Dinggen Xiong

The present disclosure provides a data reading circuit and a storage unit. The data reading circuit includes a being read unit connected to a voltage stabilizing unit and configured to store data. The voltage stabilizing unit is configured to stabilize and output a current from the being read unit to a first amplifying unit. The first amplifying unit is configured to amplify and output the current from the being read unit to a comparing unit. A reference unit is connected to a second amplifying unit, to output a reference current to the second amplifying unit. The second amplifying unit is configured to amplify and output the reference current to the comparing unit. The comparing unit is configured to compare a comparing point voltage, that is based on the amplified current of the being read unit and the amplified reference current, with a reference voltage and to output comparison results.

Data reading circuit and storage unit

A word line voltage generator circuit, a semiconductor device, and an electronic device are provided. The word line voltage generator circuit includes a switch circuit connected to a high-level signal and a low-level signal and configured to output the high-level signal or the low-level signal as a word line voltage signal based on an input signal, and a drive signal control circuit configured to provide a drive signal connected to the switch circuit in response to the input signal. A voltage rising speed of the word line voltage signal is controlled by the drive signal.

Word line voltage generator for multiple-time programmable memory

Growing community of inventors

Shanghai, China

Zijian Zhao