University of Illinois

Lam Research Corporation

Zihao Ouyang

Tae Seung Cho

David N Ruzic

Ivan Shchelkanov

Yuilun Wu

Jungmi Hong

Eric A Hudson

Shashank C Deshmukh

Prabhakara Gopaladasu

Chia-Chun Wang

Sonny Li

An apparatus for depositing a coating on a substrate at atmospheric pressure comprises (a) a plasma torch comprising a microwave source coupled to an antenna disposed within a chamber having an open end, the chamber comprising a gas inlet for flow of a gas over the antenna to generate a plasma jet; (b) a substrate positioned outside the open end of the chamber a predetermined distance away from a tip of the antenna; and (c) a target material to be coated on the substrate disposed at the tip of the antenna.

Apparatus and method for depositing a coating on a substrate at atmospheric pressure

A method for etching features into a porous low-k dielectric etch layer is provided. A plurality of cycles is performed in a plasma processing chamber. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas comprising a fluorocarbon and/or hydrofluorocarbon gas, creating a plasma in the plasma processing chamber using the deposition gas, depositing a fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising a noble gas and a carbon etching additive, creating a plasma in the plasma processing chamber using the activation gas, providing an activation bias in the plasma processing chamber, wherein the activation bias causes the etching of the low-k dielectric layer, with consumption of the fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the activation gas.

Porous low-k dielectric etch

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Milpitas, CA, United States of America

Zihao Ouyang