The Penn State Research Foundation

Cornell University

Zi-Kui Liu

Darrell G Schlom

Xiaoxing Xi

Joan M Redwing

Shun-Li Shang

Brandon J Bocklund

Patrick Vogt

Xianghui Zeng

Alexej Pogrebnyakov

Felix V E Hensling

Zhi-Jie Liu

Kathy Azizie

Molecular-beam epitaxy (MBE) and more particularly suboxide MBE (S-MBE) and related structures are disclosed. S-MBE is disclosed that includes the use of a molecular beam of a suboxide that may be subsequently oxidized in a single step reaction to form an oxide film. By way of example, for a gallium oxide (GaO) film, a molecular beam including a suboxide of gallium (GaO) may be provided. S-MBE may be performed in adsorption-controlled regimes where there is an excess of source material containing species in order to promote high growth rates for oxide films with improved crystallinity. Source mixtures for providing molecular beams of suboxides are disclosed that include mixtures of a particular element and an oxide of the element in ratios that promote such adsorption-controlled growth regimes. Related structures include oxide films having increased thickness with reduced crystal defects, including single polymorph films of gallium oxide.

Suboxide molecular-beam epitaxy and related structures

Boride thin films of conducting and superconducting materials are formed on silicon by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, on silicon substrates by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the silicon substrates.

Boride thin films on silicon

Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.

Method for producing boride thin films

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State College, PA, United States of America

Zi-Kui Liu