United Microelectronics Corp.

Zhuona Ma

Mengkai Zhu

Runshun Wang

Hua-Kuo Lee

An etch stop detection structure and an etch stop detection method are provided. The etch stop detection structure includes a substrate, a first dielectric layer, a first stop layer, and a second dielectric layer. The substrate includes a device region and a detection region. The first dielectric layer is located on the substrate. The first stop layer is located on the first dielectric layer. The second dielectric layer is located on the first stop layer. There is a first air gap in the first dielectric layer and the first stop layer in the device region. There is a trench in the second dielectric layer in the detection region. The trench exposes the first stop layer. The etch stop detection structure can be used to detect the etch stop signal.

Etch stop detection structure and etch stop detection method

A method for fabricating a semiconductor device is provided. The method includes providing a substrate, having a cell region and a logic region and including a first conductive layer as a top layer, wherein shallow trench isolation (STI) structures are disposed in the substrate at cell region and the logic region. A first dry etching process is performed to preliminarily etch the first conductive layer and the STI structures at the cell region. A wet etching process is performed over the substrate to etch the STI structures down to a preserved height. A control gate stack is formed on the first conductive layer at the cell region. A second dry etching process is performed on a portion of the first conductive layer to form a floating gate under the control gate stack at the cell region and remove the first conductive layer at the logic region.

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Singapore, Singapore

Zhuona Ma