International Business Machines Corporation

Zhu Liu

Cyril Cabral, Jr

Christian Lavoie

John Michael Cotte

Xiaoyan Shao

Laura Louise Kosbar

Kathryn C Fisher

Kenneth Parker Rodbell

The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.

Method to electrodeposit nickel on silicon for forming controllable nickel silicide

A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.

Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon

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Kunming, China

Zhu Liu