Aixtron Se

Zhongyuan Jia

Somnath S Nag

Maxim Kelman

Robert A Ditizio

Robert Ditizio

Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may be elevated to a temperature less than 700&#xb0; C. While the substrate temperature is elevated, a group V precursor may be flowed into the deposition chamber in order to transform the hydrogen terminated (Si&#x2014;H) surface of the passivation layer into an Arsenic terminated (Si&#x2014;As) surface. After the substrate has been cooled, a group III precursor and the group V precursor may be flowed in order to form a nucleation layer. Finally, at an elevated temperature, the group III precursor and group V precursor may be flowed in order to form a bulk III-V layer.

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Cupertino, CA, United States of America

Zhongyuan Jia