Other

Kilopass Technologies, Inc.

Lattice Semiconductor Corporation

Zhongshan Liu

Jack Zezhong Peng

Fei Ye

Harry Luan

David Fong

Michael David Fliesler

Jianguo Wang

A multi-wavelength laser array is achieved by using a wavelength selectable optical device as a feedback mirror for a plurality of lasers. The wavelength of reflected light from the optical device depends upon the parameters in the local reflection positions of the optical device along the direction as determined by guided-mode resonance. Thus, the multi-wavelength laser array is able to emit a plurality of laser beams with desired wavelengths, each within the gain curve of its active element.

Laser array for generating stable multi-wavelength laser outputs

A laser system capable of producing multiple groups of output wavelengths is disclosed. In one embodiment, an optical fiber bundle doped with erbium (Er) or erbium/ytterbium (Er/Yb) is perpendicularly attached to an optical device, which serves as a guided-mode resonance feedback mirror, to form a fiber laser matrix. The optical device contains a substrate layer, a waveguide layer, and a grating layer, with non-uniform device parameters. The wavelength of the resonant light and its corresponding laser light of an individual optical fiber depends upon the parameters in the location on the optical device where the fiber is attached. In another embodiment, a plurality of active waveguides in a body are attached to an optical device to form a diode-pumped crystal laser matrix with multi-group output wavelengths. The invented laser system is capable of generating laser sources of large channel capacity for the optical network especially for the dense wavelength division multiplexing (DWDM) system.

Multi-group multi-wavelength laser matrix

A cell that can be used as a dynamic memory cell for storing data or a field programmable gate array (FPGA) cell for programming is disclosed. The cell includes a capacitor having a first terminal connected to a column bitline and a second terminal connected to a switch control node. A select transistor has a gate connected to the read bitline, a source connected to the switch control node, and a drain connected to a row wordline. The switch control node stores data as a voltage indicative of a one or a zero.

Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown

A method of testing a memory cell is disclosed. The memory cell has a data storage element constructed around an ultra-thin dielectric, such as a gate oxide, which is used to store information by stressing the ultra-thin dielectric into breakdown (soft or hard breakdown) to set the leakage current level of the memory cell. In order to ensure that the gate oxide underlying the data storage elements are of sufficient quality for programming, the memory cells of a memory array may be tested by applying a voltage across the gate oxide of the data storage element and measuring the current flow. Resultant current flow outside of a predetermined range indicates a defective memory cell.

Growing community of inventors

Plano, TX, United States of America

Zhongshan Liu