Boe Technology Group Co., Ltd.

Zhongpeng Tian

Ce Ning

Zhengliang Li

Hehe Hu

Kun Zhao

Fengjuan Liu

Jiushi Wang

Tianmin Zhou

Lei Xiao

Jianhua Du

Nianqi Yao

Jie Huang

Jiayu He

Xuewei Gao

The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Thin film transistor and method for manufacturing the same, array substrate and display device

A magnetron sputtering device, a magnetron sputtering apparatus, and a magnetron sputtering method are provided. The magnetron sputtering device includes: a target material bearing portion, configured to bear a target material thereon; a magnet bearing section, configured to bear a magnet thereon and to be capable of driving the magnet to perform reciprocating motion along a predetermined path with respect to the target material bearing portion; a limit sensor, configured to determine an end-point position of the predetermined path along which the magnet performs reciprocating motion; the end-point position determined by the limit sensor can be adjusted along the predetermined path during a working procedure of the magnetron sputtering device.

Magnetron sputtering device, magnetron sputtering apparatus and magnetron sputtering method

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Beijing, China

Zhongpeng Tian