Beijing Institute of Nanoenergy and Nanosystems

Zhonglin Wang

Chi Zhang

Wei Li

Jun Chen

Wei Tang

Jie Wang

Gang Cheng

Limin Zhang

Xiaofeng Wang

Long Lin

Guang Zhu

Yuanjie Su

Zonghong Lin

Fengben Xi

Simiao Niu

Shiquan Lin

Yaokun Pang

Shengming Li

Fang Yi

Wenzhuo Wu

Xiaonan Wen

Ya Yang

Hulin Zhang

Sihong Wang

Huling Zhang

A method and an apparatus for measuring an electrical property of a sample material are provided. In the method, an alternating voltage is applied to a piezoelectric ceramic so that a probe fixed on the piezoelectric ceramic vibrates above a surface of the sample material, a target contact potential difference between the probe and the sample material is measured, and a target amplitude of an induced alternating current generated due to the vibration of the probe above the surface of the sample material, a target work function of the surface of the sample material is determined according to the target contact potential difference and a determined work function of the probe, and a target charge density of the surface of the sample material is determined according to the target amplitude, the target contact potential difference, and a pre-stored target amplitude determination function for the induced alternating current.

Method and apparatus for measuring electrical properties of sample material, device and medium

The present disclosure provides a power management module, a power management method and an energy system for a triboelectric nanogenerator. The power management module is configured to be electrically connected to a back end of the triboelectric nanogenerator, the power management module includes a rectifying circuit and a Direct Current (DC) buck circuit. The rectifying circuit is electrically connected to the back end of the triboelectric nanogenerator for rectifying a signal generated by the triboelectric nanogenerator to output a first DC signal, and the DC buck circuit is electrically connected to a back end of the rectifying circuit for decreasing a voltage of the first DC signal to output a second DC signal. The power management module may maximize and autonomously release the energy of the triboelectric nanogenerator, and perform a buck conversion for charging the energy storage device or directly driving the electronic device.

Power management circuit and power management method for triboelectric nanogenerator, and energy system

The present disclosure discloses a power management circuit and a power management method for a triboelectric nanogenerator. The power management circuit includes a pulse current control switch, an intermediate energy storage element, and a target energy storage element, wherein the pulse current control switch is configured to instantaneously connect two electrode layers of the triboelectric nanogenerator to generate a transient pulse current, after movement of two relative moving components of the triboelectric nanogenerator generates static charges induced between the two electrode layers; the intermediate energy storage element is configured to store electric energy of the transient pulse current, and the target energy storage element is configured to store the electric energy output from the intermediate energy storage element.

Power management circuit and power management method for triboelectric nanogenerator

The present disclosure relates to nanogenerator technology, and discloses a method and a circuit for energy management in a Triboelectric Nanogenerator (TENG), as well as an apparatus including the circuit. The method includes: storing electrical energy outputted from the TENG temporarily in a temporary energy storage; and transferring the electrical energy stored temporarily in the temporary energy storage to an energy storage. With the above solution, the temporary energy storage can be charged and discharged periodically, so as to charge the energy storage. It is possible to achieve impedance match between the TENG and the energy storage and thus a significantly improved energy storage efficiency, such that an AC outputted from the TENG can be converted into a constant-voltage DC output efficiently.

Method, circuit and apparatus for energy management in triboelectric nanogenerator

A tubular friction nanogenerator and a cloth and an energy shoe including the same are provided. The tubular friction nanogenerator includes: a tubular friction layer, the friction layer being made of elastic material; an outer electrode layer covering an outer side of the tubular friction layer; an inner electrode layer having an outer surface, a portion or whole of which is attached to an inner surface of the friction layer, wherein in response to the tubular friction nanogenerator being restored after deformation, at least a portion of the inner electrode layer contacts and then is separated from an inner surface of the friction layer, so that a charge flow is generated between the inner electrode layer and the outer electrode layer.

Tubular friction nanogenerator and cloth and energy shoe including the same

The disclosure provides a transistor array including a substrate and a plurality of transistor elements sharing the substrate. Each of the transistor elements includes: a bottom electrode disposed on the substrate and a connection wire for the bottom electrode; a piezoelectric body disposed on the bottom electrode, wherein the piezoelectric body is made of piezoelectric material; and a top electrode disposed on the piezoelectric body. The disclosure also provides a method for manufacturing a transistor array. The transistor array contains transistor elements which are two-terminal devices. Piezoelectric bodies with piezoelectric properties are provided between the top electrodes and bottom electrodes of the transistor array. The carrier transport progress of the transistor elements in the transistor array device can be effectively regulated or triggered by strains or stresses applied on the transistor elements.

Transistor array and manufacturing method thereof

The present disclosure provides an impulse generator and a generator set. The impulse generator comprises: a first substrate; a first conductive film layer on the first substrate; an insulation film layer on the first conductive film layer; a second substrate; a second conductive film layer on the second substrate; and an elastic connection body for connecting the first substrate with the second substrate such that the insulation film layer and the second conductive film layer face each other; wherein, when no external force is applied on the first substrate or the second substrate, the insulation film layer is separated from the second conductive film layer; and, when an external force is applied on the first substrate or the second substrate, the insulation film layer is contacted with the second conductive film layer such that, a surface charge transfer is generated by the contact between the insulation film and the second conductive film layer, owing to their difference in triboelectric series. For the impulse generator according to the present disclosure, when a periodic external force is applied on the substrate of the generator, AC pulse signal output may be formed between the first conductive film layer and the second conductive film layer.

Impulse generator and generator set

The present invention provides a contact electrification effect-based back gate field-effect transistor. The back gate field-effect transistor includes: a conductive substrate; an insulating layer formed on a front face of the conductive substrate; a field-effect transistor assembly including: a channel layer, a drain and a source, and a gate; and a triboelectric nanogenerator assembly including: a static friction layer formed at a lower surface of the gate, a movable friction layer disposed opposite to the static friction layer and separated by a preset distance, and a second electro-conductive layer formed at an outside of the movable friction layer and being electrically connected to the source; wherein, the static friction layer and the movable friction layer are made of materials in different ratings in triboelectric series, and the static friction layer and the movable friction layer are switchable between a separated state and a contact state under the action of an external force.

Contact electrification effect-based back gate field-effect transistor

Growing community of inventors

Beijing, China

Zhonglin Wang