Stmicroelectronics Asia Pacific Pte Limited

Agency for Science, Technology and Research

Zhonglin Miao

Shanzhong Wang

Mui Hoon Nai

Soo Jin Chua

Sudhiranjan Tripathy

Peng Chen

Vincenzo Vinciguerra

Adeline Chan

Ivan Teo

A nanotube-photoresist composite is fabricated by preparing a nanotube suspension using a nanotube structure-containing raw material, dispersing the nanotube suspension in a photoresist using ultra-sonication to produce a nanotube suspension-photoresist mix, spin-coating the nanotube suspension-photoresist mix on a substrate to form a nanotube suspension-photoresist composite layer, and removing one or more solvents in the nanotube suspension-photoresist composite layer by baking.

CNT devices, low-temperature fabrication of CNT and CNT photo-resists

Systems and methods for creating carbon nanotubes are disclosed that comprise a growing a nanotube on a tri-layer material. This tri-layer material may comprise a catalyst and at least one layer of Ti. This tri-layer material may be exposed to a technique that is used to grow a nanotube on a material such as a deposition technique.

Material for growth of carbon nanotubes

A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.

Growing community of inventors

Singapore, Singapore

Zhonglin Miao