Sandisk Information Technology (shanghai) Co., Ltd.

Sandisk Technologies Inc.

Zhongli Ji

Chin-Tien Chiu

Hem P Takiar

Ning Ye

Yangming Liu

Tong Zhang

Zhong Lu

Zengyu Zhou

Fen Yu

Dacheng Huang

Shiv Kumar

Shaopeng Dong

A method of forming a semiconductor device includes forming vertical contact fingers in a substrate having side portions that are flexible. Contact fingers are formed near one or more edges of the flexible side portions of the substrate. After semiconductor dies are mounted to and electrically coupled to the substrate, the semiconductor device may be encapsulated by placing the device in a mold chase including upper and lower mold plates. The lower mold plate is sized smaller than the substrate so that the flexible side portions of the substrate including the contact fingers fold vertically upward to fit within the mold.

Method of forming a semiconductor device including vertical contact fingers

A substrate semiconductor layer is attached to a carrier substrate through a sacrificial bonding material layer. A plurality of semiconductor dies included within continuous material layers are formed on a front side of the substrate semiconductor layer. Each of the continuous material layers continuously extends over areas of the plurality of semiconductor dies. A plurality of dicing channels is formed between neighboring pairs among the plurality of semiconductor dies by anisotropically etching portions of the continuous material layers located between neighboring pairs of semiconductor dies. The plurality of dicing channels extends to a top surface of the sacrificial bonding material layer. The sacrificial bonding material layer is removed selective to materials of surface portions of the plurality of semiconductor dies using an isotropic etch process. The plurality of semiconductor dies is singulated from one another upon removal of the sacrificial bonding material layer.

Semiconductor die singulation using a sacrificial bonding material layer and an anisotropic channel etch

A solid state drive is disclosed including a planar array of semiconductor devices for use in a datacenter, and a system for cooling the planar array of semiconductor devices. The semiconductor devices may be arranged in a grid pattern, spaced apart from each other so as to define rows and columns of flow pathways, or cooling tunnels, around and between the semiconductor devices.

Datacenter 3D solid state drives with matrix cooling

A semiconductor device is disclosed including at least first and second vertically stacked and interconnected groups of semiconductor packages. The first and second groups of semiconductor packages may differ from each other in the number of packages and functionality.

Semiconductor device including vertically integrated groups of semiconductor packages

A semiconductor device including alternating stepped semiconductor die stacks to allow for large numbers of semiconductor die to be provided within a semiconductor device using short wire bonds.

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Shanghai, China

Zhongli Ji