Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Zhonghua Qian

Junrong Yan

Xianlu Cui

Yu Wang

Chee Keong Chin

Yi Wu

Xiaofeng Di

Yang Lei

Kailei Zhang

CheeKeong Chin

Cheng Chang

Keming Zhou

Zhengjie Zhu

Yuyun Lou

A semiconductor die is separated from a semiconductor wafer using a method that involves performing a partial cut on the semiconductor wafer, applying tape lamination to a front side of the semiconductor wafer, grinding a back side of the semiconductor wafer, mounting the semiconductor wafer to a die attach film (DAF) layer, removing the tape lamination from the front side of the semiconductor wafer, and performing a DAF-die separation operation to separate the semiconductor die from the adjacent semiconductor die. A DAF laser is not used during the method of separating a semiconductor die from a semiconductor wafer. The front side is the side of the semiconductor wafer where integrated circuits are exposed. The partial cut is between the semiconductor die and an adjacent semiconductor die. The back side is opposite of the front side and the back side is a silicon layer of the semiconductor die.

Dicing and wafer thinning to form semiconductor dies

A method includes the step of thinning a semiconductor wafer by a horizontal stealth lasing process, and semiconductor wafers, dies and devices formed thereby. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by supporting an active surface of the wafer on a rotating chuck, and focusing a horizontally-oriented laser in multiple cycles at different radii within the rotating wafer. Upon completion of the multiple cycles, a portion of the wafer substrate may be removed, leaving the wafer thinned to its final thickness. Thereafter, a vertical stealth lasing process may be performed to cut individual semicondcutor dies from the thinned wafer.

Semiconductor wafer thinned by horizontal stealth lasing

A semiconductor device includes an integrated circuit die having bond pads and a bond wires. The bond wires are connected to respective ones of the bond pads by a ball bond. An area of contact between the ball bond and the bond pad has a predetermined shape that is non-circular and includes at least one axis of symmetry. A ratio of the ball bond length to the ball bond width may be equal to a ratio of the bond pad length to the bond pad width.

Wire bonding for semiconductor devices

A semiconductor device is vertically mounted on a medium such as a printed circuit board (PCB). The semiconductor device comprises a block of semiconductor dies, mounted in a vertical stack without offset. Once formed and encapsulated, side grooves may be formed in the device exposing electrical conductors of each die within the device. The electrical conductors exposed in the grooves mount to electrical contacts on the medium to electrically couple the semiconductor device to the medium.

Vertical semiconductor device with side grooves

A semiconductor device package includes a mechanical support structure that provides mechanical support to a stack of dies, where the dies are laterally offset from each other. The support structure has a sloped surface that is disposed at a non-perpendicular and non-parallel angle to other surfaces of the mechanical support structure. Electrical contacts are disposed on the sloped surface of the mechanical support structure for electrically interfacing with the stacked dies and on a different surface of the mechanical support structure for electrically interfacing with a substrate.

Sloped interconnector for stacked die package

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Zhonghua Qian