Asml Netherlands B.v.

Hermes Microvision Inc.

Hermes Microvision, Inc. (taiwan)

Zhonghua Dong

Yongxin Wang

Wei Fang

Rui-Ling Lai

Zhongwei Chen

Weiming Ren

Zhong-wei Chen

Kenichi Kanai

Lingling Pu

Ying Luo

Xuedong Liu

Yixiang Wang

Chiyan Kuan

Chung-Shih Pan

Yu Liu

Yan Zhao

Yi-Xiang Wang

Long Ma

Chester Kuo

Chuan Li

Chih-Yu Jen

Steve Lin

Bohang Zhu

Kuo-Feng Tseng

Bo Wang

Ruochong Fei

Long Di

Xuehui Yin

Nianpei Deng

KuoFeng Tseng

Eric Ma

Jon Chiang

Peilei Zhang

Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 kHz to 50 kHz, and 50 kHz to 200 kHz, respectively.

Systems and methods for focusing charged—particle beams

Detectors and detection systems are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first plurality of the sensing elements and a second plurality of the sensing elements, and a plurality of sections configured to connect the first plurality to an output, and connect the second plurality to an output. Switching regions may be provided between the sensing elements that are configured to connect two or more sensing elements. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy and/or beam intensity.

Architecture for large active area high speed detector

A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

Semiconductor charged particle detector for microscopy

An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.

Cross-talk cancellation in multiple charged-particle beam inspection

Systems and methods for implementing a detector array are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first element and a second element, and a switching region therebetween configured to connect the first element and the second element. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy.

Field programmable detector array

Systems and methods for implementing a detector array are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first element and a second element. The detector comprises a switching element configured to connect the first element and the second element. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy.

Switch matrix design for beam image system

Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.

Methods of inspecting samples with multiple beams of charged particles

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

Method and apparatus for charged particle detection

Detectors and detection systems are disclosed. According to certain embodiments, a detector comprises a substrate comprising a plurality of sensing elements including a first sensing element and a second sensing element, wherein at least the first sensing element is formed in a triangular shape. The detector may include a switching region configured to connect the first sensingelement and the second sensing element. There may also be provided a plurality of sections including a first section connecting a first plurality of sensing elements to a first output and a second section connecting a second plurality of sensing elements to a second output. The section may be provided in a hexagonal shape.

Pixel shape and section shape selection for large active area high speed detector

An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.

Apparatus and method for detecting time-dependent defects in a fast-charging device

Laser sub-divisional error (SDE) effect is compensated by using adaptive tuning. This compensated signal can be applied to position detection of stage in ebeam inspection tool, particularly for continuous moving stage.

Laser SDE effect compensation by adaptive tuning

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Sunnyvale, CA, United States of America

Zhonghua Dong