Chongqing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Boe Technology Groupco., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Zhonghao Huang

Yongliang Zhao

Ming Wang

Xu Wu

Chao Zhang

Maokun Tian

Hongru Zhou

Zhiyong Ning

Rui Wang

Kai Wang

Xiaonan Dong

Yutong Yang

Seung Moo Rim

Seungmoo Rim

Zhaojun Wang

Kunkun Gao

Yang Wang

Wei Chen

Bo Liu

Zheng Liu

Can Wang

Wei Shen

Dan Liu

Xiaowei Liu

Taeyup Min

Rong Wu

Chao Fan

Yabin An

Jianfei Shi

Baosheng He

Houfeng Zhou

Yuanyao Dou

Chengjun Qi

An array substrate, a display device and a fabrication method are provided. The array substrate includes a first metal layer at one side of a base substrate, the first metal layer including a light shielding part, a source, a drain in a display area; a second metal layer at a side, facing away from an active layer, of gate insulating layer, the second metal layer includes a gate, a source-landing electrode a drain-landing electrode in the display area, the source-landing electrode is in contact with the active layer and the source through a first via hole penetrating through the gate insulating layer and a buffer layer and exposing one end of the active layer, the drain-landing electrode is in contact with the active layer and the drain through a second via hole penetrating through the gate insulating layer and the buffer layer and exposing other end of the active layer.

Array substrate and display device

Array substrate, display device and fabrication method

A display substrate and a manufacturing method thereof and a display panel are disclosed. The display substrate includes a base substrate, a connection electrode, a conductive sealant, a plurality of via-holes respectively in different layers and a bridge electrode. The connection electrode is on the base substrate; the conductive sealant is at a side, away from the base substrate, of the connection electrode and is electrically connected with the connection electrode via the plurality of via-holes respectively in different layers; the bridge electrode is at least partially in at least one via-hole of the plurality of via-holes, and is electrically connected with the connection electrode and the conductive sealant; in a direction perpendicular to the base substrate, the plurality of via-holes are at least partially not overlapped with each other.

Display substrate and manufacturing method thereof, display panel

A half via hole structure, a method for manufacturing the same, an array substrate, and a display panel are provided. The half via hole structure includes: a spacer layer arranged on an underlaying substrate; a passivation layer arranged on the spacer layer and provided with a first via hole, an orthographic projection of the first via hole on the underlaying substrate being within that of the spacer layer on the underlaying substrate; a first conductive layer arranged on the spacer layer and having a width smaller than a diameter of the first via hole; an insulating layer arranged between the spacer layer and the passivation layer and provided with a second via hole; and a second conductive layer arranged on the passivation layer and overlapped with the first conductive layer through the first via hole.

Half via hole structure, manufacturing method thereof, array substrate, and display panel

A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.

Thin film transistor and manufacturing method thereof and electronic device

A shift register, a gate drive circuit, and a display panel are provided. The shift register includes an input sub-circuit configured to pre-charge a pull-up node using an input signal; an output sub-circuit configured to output a clock signal through an signal output terminal; a pull-down control sub-circuit configured to control a potential of a pull-down node using a power supply voltage signal; a first pull-down sub-circuit configured to pull down a potential of the pull-down node using a first preset voltage signal; and a first control sub-circuit configured to control the potential of the pull-up node using a second preset voltage signal in response to the potential of the pull-down node; a potential of the first preset voltage signal is lower than a potential of a non-operating level signal of the first pull-down sub-circuit, but higher than a potential of the second preset voltage signal.

Shift register, gate drive circuit and display panel

An array substrate includes a base substrate, a light-shielding pattern, a buffer pattern, an active layer, a gate insulating layer and a first passivation layer provided with a first via, a second via and a third via, and a source and a drain. An entire orthographic projection of the active layer on the base substrate coincides with an orthographic projection of at least part of the buffer pattern on the base substrate. The orthographic projection of the buffer pattern on the base substrate is within a border of an orthographic projection of the light-shielding pattern on the base substrate, and its area is less than an area of the orthographic projection of the light-shielding pattern on the base substrate. One of the source and the drain is coupled to the active layer through the first via, and another one is coupled to the active layer through the second via and the light-shielding pattern through the third via.

Array substrate and method for manufacturing the same, display panel and display device

The disclosure relates to an array substrate. The array substrate may include a base substrate, an auxiliary electrode, a thin film transistor, a first insulating layer, a first electrode, a second insulating layer, and a second electrode sequentially arranged in a direction away from the base substrate. The auxiliary electrode is between the first insulating layer and the second insulating layer and insulated from the first electrode, the auxiliary electrode is coupled to a drain of the thin film transistor through a first via hole in the first insulating layer, and the second electrode is coupled to the auxiliary electrode through a second via hole in the second insulating layer.

Array substrate and manufacturing method thereof, display panel and display apparatus

A flexible display device includes a flexible display panel, a reel, a substantially U-shaped guide rail, and a magnetic field generating member. The reel is provided with a slit opening in a surface thereof and a rotating shaft inside. The U-shaped guide rail has an open side and a closed end, and the closed end is arranged adjacent to the rotating shaft. The rectilinear conductor is configured to bridge the open side of the U-shaped guide rail to form a closed circuit with the U-shaped guide rail. The magnetic field generating member is configured to provide a magnetic field to the rectilinear conductor. A first side edge of the flexible display panel is connected with the rotating shaft of the reel through the slit opening, and a second side edge of the flexible display panel opposite to the first side edge is connected with the rectilinear conductor.

Flexible display device

A pixel circuit and a display device are provided. The pixel circuit includes: a driving transistor; a switching transistor for transmitting a data voltage signal to a first electrode of the driving transistor; a storage capacitor having a first terminal coupled to a control electrode of the driving transistor, and a second terminal coupled to a reference voltage terminal; a threshold voltage extraction unit for coupling the control electrode of the driving transistor to a second electrode of the driving transistor through the scan signal; a light emission control unit for transmitting a second power voltage to the first electrode of the driving transistor; a light emitting device having a first electrode coupled to a second electrode of the driving transistor and a second electrode receiving a first power voltage; a compensation unit for transmitting a compensation voltage to a second electrode of the switching transistor.

Pixel circuit and display device

Disclosed is a display device, a manufacturing method thereof and a display apparatus. The display device includes a carrier having a first surface and a second surface opposite to each other, and at least one nanotube in the carrier. Each nanotube includes a tube wall and a receiving cavity surrounded by the tube wall. The receiving cavity includes a first open end at the first surface and a second open end at the second surface. The display device further includes a first electrode at the first open end, a second electrode at the second open end and a light-emitting layer between the first electrode and the second electrode.

Display device including OLED surrounded by nanotube extending through carrier, and manufacturing method thereof

The present disclosure is related to a display panel. The display panel may include a plurality of switch units. Each of the plurality of the switch units may include a first electrode; a second electrode; a third electrode; a fourth electrode opposite the first electrode; a piezoelectric material layer between the first electrode and the fourth electrode; a connecting electrode above the fourth electrode and electrically insulated from the fourth electrode; and a driving transistor comprising a driving gate. The driving gate may be the third electrode. An orthogonal projection of the second electrode and an orthogonal projection of the third electrode on a plane of the connecting electrode may overlap the connecting electrode respectively.

Switch unit, display panel, manufacturing method thereof, and display apparatus

The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.

Thin film transistor, array substrate, display apparatus, and method of fabricating thin film transistor

Growing community of inventors

Beijing, China

Zhonghao Huang