Jds Uniphase Corporation

Infinera Corporation

Lumentum Operations LLC

Other

Zhong Pan

Craig M Ciesla

Syn-Yem Hu

David Venables

Nikolai Morozov

Joe Qingzhe Wen

Matthew L Mitchell

Marco Sosa

Abinder S Dhillon

Baranidhar Ramanathan

Michael Francis Van Leeuwen

Iftekhar Hussain

Ankur Neog

Abhijeet D Deore

Andrew Q Phan

In some implementations, an optical receiver includes a demultiplexing component configured to demultiplex a reception signal into a first reception signal and a second reception signal, a first polarization beam splitter configured to split the first reception signal into a first optical signal associated with a first polarization and a second optical signal associated with a second polarization, a second polarization beam splitter configured to split the second reception signal into a third optical signal associated with the first polarization and a fourth optical signal associated with the second polarization, a first demodulation component configured to mix the first optical signal and the second optical signal with a first local oscillator signal, and a second demodulation component configured to mix the third optical signal and the fourth optical signal with a second local oscillator signal.

Multi-carrier transmitter with integrated multiplexer and receiver with integrated demultiplexer

Disclosed herein are methods and systems for computing a launch power for an optical node by collecting data for an optical network segment and inputting the collected data and first power spectral density values into a machine learning model which are used to compute a first non-linear interference value. A first generalized-optical signal-to-noise ratio value is computed using the computed first non-linear interference value and amplified spontaneous emission values. At least one second generalized-optical signal-to-noise ratio value is computed using at least one second non-linear interference value, computed using at least one second power spectral density values, and the amplified spontaneous emission values. A highest generalized-optical signal-to-noise ratio value is determined by comparing the first generalized-optical signal-to-noise ratio value and the at least one second generalized-optical signal-to-noise ratio value. A launch power is computed using the power spectral density values associated with the highest generalized-optical signal-to-noise ratio.

Computation of optimum fiber input power

An optical device may include an optical subassembly and a digital signal processor (DSP). The optical device may include a radio frequency (RF) interconnect that electrically connects the optical subassembly and the DSP. The optical device may include a passive RF filter on one or more transmission lines of the RF interconnect.

Integration of passive microwave stop-band filter into a radio frequency (RF) interconnect printed circuit board for opto-electronic module RF bandwidth control

Consistent with the present disclosure, optical filters are provided in a reconfigurable optical add-drop multiplexer (ROADM). In one example, groups of optical signals are amplified by corresponding erbium-doped fiber amplifiers (EDFAs) and supplied to each optical filter, which has a passband that includes the wavelengths associated with the received optical signal group. Light at wavelengths outside the passband of each optical filter, such as amplified stimulated emission (ASE) light generated by a respective EDFA, is significantly attenuated. Each optical signal group, after such amplification and filtering may then be switched and combined in a multicast switch before being directed toward a desired optical communication path. When, for example, first and second optical signal groups are combined, however, the first optical signal group is accompanied by little or no ASE light at the second optical signal group wavelengths. In addition, the second optical signal group is not accompanied by significant ASE light at the first optical signal group wavelengths. Accordingly, the first and second optical signal groups have less noise than would otherwise be present in the absence of the optical filters, and bit error rates associated with the optical signal groups are reduced.

Multiplexer having ASE suppression

A high-speed feedthrough (HSFT) is disclosed for transmitting a signal having a highest frequency of at least 10 GHz between first and second locations separated by a vertical distance of at least approximately half of the shortest transmitted wavelength, and separated by a horizontal distance. A substrate structure includes multiple stacked layers. An RF transmission line is connected through the structure between the first and second locations for transmitting the signal. The RF transmission line comprises a series of sequentially connected horizontal conductors having lengths less than half of the effective wavelength and vertical conductors having heights less than one quarter of the effective wavelength, thereby spanning the horizontal and vertical distance between the two locations in a stairs-like shape through the structure's layers. Each conductor's geometry may deviate from standard 50 ohm buried strip lines and is optimized for complete 3-dimensional structure.

High-speed feedthrough having a stair-like shape transmission line formed through a multi-layer substrate

A node is configured to receive an instruction to establish a channel having a bandwidth that corresponds to an operating spectrum an optical fiber; obtain information that identifies a channel spacing and a pointer that identifies where, within the spectrum, to establish bandwidth allocations; identify a group of bandwidth segments based on the spectrum and the channel spacing; and generate bit words that correspond to the bandwidth allocations, where the bit words includes bits that, when set to a value, cause sets of segments to be reserved within the spectrum, and where the sets of segments identify where the bandwidth allocations begin and end, within the spectrum, relative to the pointer.

Super-channel assignment using a flexible grid

A system is provided that includes optical amplifiers provided upstream from an optical add-drop multiplexer (OADM). One of the optical amplifiers may be a Raman amplifier that supplies amplified light to another optical amplifier, such as an erbium doped fiber amplifier (EDFA), which, in turn, further amplifies and feeds the light to an input of the OADM. During turn-up, for example, the EDFA may initially be disabled, the power of the pump lasers of the Raman amplifier may be gradually increased until light input to the EDFA exceeds a power threshold at which the EDFA can amplify the input light. Light supplied to the EDFA does not have an excessive amount of power. Accordingly, at this point, the gain of the EDFA may be appropriately adjusted and then activated to supply optical signals to the OADM. Such optical signals may have a low power but not too low so as to prevent proper operation of downstream EDFA. Moreover, these optical signal do not have power that is so high as to cause 'spiking.' As a result, cross-talk with optical signals added by the OADM is minimized, and such added optical signals may be sufficiently amplified by optical amplifiers downstream from the OADM.

Method and apparatus for controlling an output of an optical amplifier

A sealed semiconductor device having reduced delamination of the sealing layer in high temperature, high humidity conditions is disclosed. The semiconductor device includes a substrate and a stack of device layers on the substrate sealed with a sealing layer. The upper surface of a street area of the substrate is oxidized so that the oxidized region extends under the sealing layer. The presence of the oxidized region of the upper surface of the substrate helps reduce the delamination, because the oxidized surface does not react with water to the same extent as a non-oxidized surface. The semiconductor devices remain sealed after dicing through the street area because the oxidized surface does not delaminate.

Sealed semiconductor device

The present invention provides a system, apparatus, and method for determining latency differences in channels within a link at a single test site. In particular, the method allows for a single transmitting device to determine distinct latency differences on both transmitter and receiver-side paths without requiring a terminating node on the other side of the connection. In other words, a switch is used, in lieu of such a terminating node, at the other side of the paths that switches at least one channel's content onto another channel and sends it back for a round trip on various transmitter-and-receiver-side-paths combinations. The present invention is based on round trip measurements and switching capability of the receiving node.

Determination of channel latency within a round-trip path

The present invention relates to a stable mesa-type photodetector with lateral diffusion junctions. The invention has found that without resorting to the complicated regrowth approach, a simple Zn diffusion process can be used to create high-quality semiconductor junction interfaces at the exposed critical surface or to terminate the narrow-bandgap photon absorption layers. The invention converts the epi material layers near or at the vicinity of the etched mesa trench or etched mesa steps into a different dopant type through impurity diffusion process. Preferably the diffused surfaces are treated with a subsequent surface passivation. This invention can be applied to both top-illuminating and bottom-illuminating configurations.

Mesa-type photodetectors with lateral diffusion junctions

A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor system. The increased ESD damage threshold is achieved by reducing the ESD induced current density in the photodetector by a suitable widening of the contact at a critical location, increasing the series resistance and promoting lateral current spreading by means of a current spreading layer.

Photodiode with high ESD threshold

A method of manufacture of an avalanche photodiode involving a step of making a recess in a top window layer of an avalanche photodiode layer stack, such that a wall surrounding the recess runs smoothly and gradually from the level of the recess to the level of the window layer. Further, diffusing a dopant over the entire window layer area so as to form a p-n junction at the bottom of the recess, and providing a first electrical isolation region around the recess by buried ion implantation or wet oxidation in order to limit the flow of electrical current to the p-n junction. Forming an isolation trench around the photodiode and a second electrical isolation region by ion implantation into the trench such that the second electrical isolation region runs through the absorption layer of the photodiode.

Semiconductor photodiode and method of manufacture thereof

The invention relates to an avalanche photodiode having enhanced gain uniformity enabled by a tailored diffused p-n junction profile. The tailoring is achieved by a two stage doping process incorporating a solid source diffusion in combination with conventional gas source diffusion. The solid source diffusion material is selected for its solubility to the dopant compared to the solubility of the multiplication layer to dopant. The solid source has a diameter between the first and second diffusion windows. Thus, there are three distinct diffusion regions during the second diffusion. The dopant in the multiplication layer at the edge region, the dopant from the solid source material with a relatively higher dopant concentration (limited by the solubility of the dopant in the solid source material) at the intermediate region, and the central region exposed to an infinite diffusion source from the solid source material as it is continually charged with new dopant from the external gas source. The result is that both the dopant concentration and the diffusion depth decrease gradually from the center to the edge of the device. This tailored diffusion profile enables control of the electric field distribution such that edge breakdown is suppressed.

Avalanche photodiode with edge breakdown suppression

The present invention provides a front-illuminated avalanche photodiode (APD) with improved intrinsic responsivity, as well as a method of fabricating such a front-illuminated APD. The front-illuminated APD comprises an APD body of semiconductor material, which includes a substrate and a layer stack disposed on a front surface of the substrate. The layer stack includes an absorption layer, a multiplication layer, and a field-control layer. Advantageously, a back surface of the APD body is mechanically and chemically polished, and a reflector having a reflectance of greater than 90% at the absorption wavelength band is disposed on the back surface of the APD body. Thus, incident light that is not absorbed in a first pass through the absorption layer is reflected by the reflector for a second pass through the absorption layer, increasing the intrinsic responsivity of the front-illuminated APD.

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San Jose, CA, United States of America

Zhong Pan