Taiwan Semiconductor Manufacturing Comp. Ltd.

Zhong-Hao Chen

Feng Han

Jian Yuan Wu

Shuai Zhang

Jian Wu

Lian-Jie Li

A super junction structure includes a substrate, wherein the substrate has a first conductivity type. The super junction structure includes an epitaxial layer over the substrate, wherein the epitaxial layer has a second conductivity type opposite the first conductivity type. The super junction structure further includes a bury layer between the epitaxial layer and the substrate, wherein the bury layer has the second conductivity type. The super junction structure further includes a conductive pillar in the epitaxial layer, wherein the conductive pillar has the first conductivity type, sidewalls of the conductive pillar are angled with respect to a top-most surface of the epitaxial layer, a bottom surface of the conductive pillar is rounded, and a top-most surface of the conductive pillar is coplanar with the top-most surface of the epitaxial layer.

Method of manufacturing a super junction structure and super junction structure

A method of manufacturing a super junction structure includes etching a material to define a trench, wherein the trench has a tapered profile. The method further includes implanting dopants into sidewalls and a bottom surface of the trench to define a doped region, wherein the doped region surrounds the trench. The method further includes depositing an undoped material into the trench. The method further includes performing a thermal process, wherein the thermal process drives the dopants from the doped region into the undoped material to form a conductive pillar in the trench.

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Shanghai, Taiwan

Zhong-Hao Chen