Hewlett-packard Development Company, L.p.

Other

Zhizhang Chen

Sriram Ramamoorthi

Paul J Benning

Chien-Hua Chen

Thomas Eugene Novet

Ronald L Enck

Hang Liao

Timothy F Myers

Alexander N Govyadinov

Mohammed Saad Shaarawi

Michael John Regan

Hung Liao

James Elmer Abbott, Jr

Qin Liu

John Liebeskind

Jennifer Shih

Brian E Bolf

Heon Lee

Michael A Pate

Terry E McMahon

Neal W Meyer

Roberto A Pugliese

Mark Alan Johnstone

Leslie Louis Szepesi, Jr

Chin Dixie Huang

James Weaver

Jeff Hintzman

Michael W Cumbie

Lung T Tran

Peter James Fricke

Gregory Scott Herman

James Richard Przybyla

Lawrence H White

Tony S Cruz-Uribe

David M Schut

Jeremy Sells

Robert Newton Bicknell

Benjamin L Clark

Michael G Groh

James E Abbott

Hua Tan

Mark David Johnson

Steven R Geissler

John L Williams

Michael Setera

Michael David Bic

Michael David Bice

Paul Krause

Lori Tully

Jr James Elmer Abbott

Brian Bolf

Jr Roberto A Pugliese

Fluid feed paths having enhanced wettability characteristics are disclosed. An example printhead includes a nozzle to expel fluid therefrom, and a fluid feed path to fluidly couple a fluid source and the nozzle. Fluid feed path walls are composed of a first material having a first wettability characteristic and a second material having a second wettability characteristic. The second wettability characteristic differing from the first wettability characteristic. A coating is formed on at least a portion of the fluid feed path defined by the first material and the second material of the substrate. The coating to harmonize the first wettability characteristic and the second wettability characteristic.

Fluid feed path wettability coating

A passivation stack can include a laminated film, including from 8 to 40 alternating layers of HfOand SiO. The layers can individually have a thickness from 8 Angstroms to 40 Angstroms, and the laminated film can have a total thickness of 280 Angstroms to 600 Angstroms. The passivation stack can also include a barrier film of HfOhaving a thickness from 50 Angstroms to 300 Angstroms applied to the laminated film.

Passivation stacks

A thin film stack can include a metal substrate having a thickness of from 200 angstroms to 5000 angstroms and a passivation barrier disposed on the metal substrate at a thickness of from 600 angstroms to 1650 angstroms. The passivation barrier can include a dielectric layer and an atomic layer deposition (ALD) layer disposed on the dielectric layer. The dielectric layer can have a thickness of from 550 to 950 angstroms. The ALD layer can have a thickness from 50 to 700 angstroms.

Thin film stacks

In an example, a lab-on-chip Raman spectroscopy system is described. The lab-on-chip system includes a housing having a fluid channel formed thereon. The fluid channel is coupled to an inlet and to an outlet. A surface-enhanced Raman spectroscopy substrate is positioned inside the fluid channel. The surface-enhanced Raman spectroscopy substrate includes a plasmonic nanostructure and a sacrificial, conformal passivation coating deposited over at least the plasmonic nanostructure.

Plasmonic nanostructure including sacrificial passivation coating

A method for forming a surface enhanced Raman spectroscopy (SERS) sensing apparatus may include providing a body having an internal microfluidic passage, the microfluidic passage having an interior surrounded by an interior surface, depositing a conformal inorganic passivation film onto the interior surface so as to continuously surround the interior by atomic layer deposition and positioning a SERS sensor in connection with the microfluidic passage after the depositing of the conformal inorganic film.

SERS sensor apparatus with passivation film

According to an example, a printhead including a thin film passivation layer, an adhesion layer, and a fluidics layer; wherein the thin film passivation layer is an atomic layer deposition thin film layer is disclosed.

Printhead comprising a thin film passivation layer

In one example, a printhead structure includes an ejector element, a multi-layer insulator covering the ejector element, and an amorphous metal on the insulator.

Printhead structure

Energy efficient printheads are disclosed. An example printhead includes a substrate with channels to direct ink toward a plurality of nozzles of the printhead. The example printhead further includes a passivation layer on the substrate. The passivation layer includes a first thin film of a first dielectric material formed using atomic layer deposition.

Energy efficient printheads

According to an example, a fluid ejection device may include a substrate, a resistor positioned on the substrate, an overcoat layer positioned over the resistor, a fluidics layer having surfaces that form a firing chamber about the resistor, in which the overcoat layer is positioned between the resistor and the firing chamber, and a thin film membrane covering the surfaces of the fluidics layer that form the firing chamber and a portion of the overcoat layer that is in the firing chamber.

Fluid ejection device

In one example, a liquid ejection device. The device includes a first metal layer over a substrate, a dielectric layer over the first metal layer, and an orifice through the dielectric layer to the first metal layer. The device also includes a second metal layer over the dielectric layer and partially filling the orifice to form a via to electrical connect the two metal layers. The via has a depth-to-width ratio of at least 0.4. The device further includes a passivation stack covering the second metal layer including all interior surfaces of the via. The stack includes an ALD-deposited layer formed by atomic layer deposition.

Atomic layer deposition passivation for via

Accounting for oscillations with drop ejection waveforms can include identifying a previous ejection waveform having a first plurality of parameters including a time interval from a final pulse of the previous ejection waveform. Accounting for oscillations with drop ejection waveforms can include determining a second plurality of parameters based on the first plurality of parameters, where the second plurality of parameters define a current ejection waveform that accounts for oscillations caused by the previous ejection waveform. Accounting for oscillations with drop ejection waveforms can include applying the current ejection waveform to cause an ejection nozzle of the printhead to generate a desired fluid drop.

Accounting for oscillations with drop ejection waveforms

An elastic device may comprise an amorphous metal comprising at least one refractory metal, at least two elements selected from periods, 4, 5, 6, 9, and 10, and at least one metalloid. A membrane may comprise a layer of silicon dioxide and a layer of amorphous metal. A MEMS device may comprise a layer of amorphous metal comprising at least one refractory metal, at least two elements selected from periods, 4, 5, 6, 9, and 10, and a metalloid. In one example, the amorphous material comprises Tantalum (Ta), Tungsten (W), and Silicon (Si). In another example, the metalloid is Silicon. In yet another example, the refractory metals comprise Niobium, Molybdenum, Tantalum, Tungsten, Rhenium, or combinations thereof.

Elastic device

A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.

Microelectronic device

This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.

3D interconnect with protruding contacts

A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.

Storage device with charge trapping structure and methods

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Corvallis, OR, United States of America

Zhizhang Chen