Applied Materials, Inc.

Zhize Zhu

Jeffrey Drue David

Harry Q Lee

Boguslaw A Swedek

Dominic J Benvegnu

Charles C Garretson

Wen-Chiang Tu

Huanbo Zhang

Eric Lau

Brian J Brown

Thomas H Osterheld

Benjamin Cherian

Michael Xiaoxuan Yang

Timothy Weidman

Farhad K Moghadam

Arulkumar P Shanmugasundram

Kapila P Wijekoon

Amit Khandelwal

Fang Mei

Xiaoyuan Hu

Avgerinos V (Jerry) Gelatos

Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for a plurality of locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to the carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones from a plurality of pressurizable zones of the carrier head that are spaced angularly around the center of the substrate, and for each particular zone of the plurality of zones, calculating a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.

Control of processing parameters for substrate polishing with substrate precession

Generating a recipe for controlling a polishing system includes receiving a target removal profile that includes a target thickness to remove for a plurality of locations on a substrate that are angularly distributed around the substrate, and storing a first function defining a polishing rate for a zone from a plurality of pressurizable zones of a carrier head that are angularly distributed around a the carrier head. The first function defines polishing rates as a function of pressures. For each particular zone of the plurality of zones a recipe defining a pressure for the particular zone over time is calculated by calculating an expected thickness profile after polishing using the first function, and minimizing a cost function that incorporates a first term representing a difference between the expected thickness profile and a target thickness profile.

Control of processing parameters for substrate polishing with angularly distributed zones using cost function

A method for chemical mechanical polishing includes receiving an angular removal profile for a carrier head and an angular thickness profile of a substrate. Prior to polishing the substrate, a desired angle of the carrier head relative to the substrate is selected for loading the substrate into the carrier head. Selecting the desired angle is performed based on a comparison of the angular removal profile for the carrier head and the angular thickness profile of the substrate to reduce angular non-uniformity in polishing. The carrier head is rotated to receive the substrate at the desired angle, the substrate is transferred to the carrier head and loaded in the carrier head with the carrier head at the desired angle relative to the substrate, and the substrate is polished.

Asymmetry correction via oriented wafer loading

A chemical mechanical polishing system includes a metrology station having a sensor configured to measure a thickness profile of a substrate, a robotic arm configured to transfer the substrate from the metrology station to a polishing station having, a platen to support a polishing pad having a polishing surface, a carrier head on the polishing surface, the carrier head having a membrane configured to apply pressure to the substrate in the carrier head, and a controller configured to receive measurements from the sensor and configured to control the robotic arm to orient the substrate in the carrier head according to substrate profile and a removal profile for the carrier head.

A method of polishing includes polishing a substrate, receiving an identification of a selected spectral feature to monitor during polishing, measuring a sequence of spectra of light reflected from the substrate while the substrate is being polished, determining a location value and an associated intensity value of the selected spectral feature for each of the spectra in the sequence of spectra to generate a sequence of coordinates, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of coordinates. At least some of the spectra of the sequence differ due to material being removed during the polishing, and the coordinates are pairs of location values and associated intensity values.

Tracking spectrum features in two dimensions for endpoint detection

A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of a second set of parameters based on the difference, and polishing the substrate on a second platen using the adjusted parameter.

Using optical metrology for within wafer feed forward process control

A method includes polishing a substrate on a first platen using a first set of parameters, obtaining a plurality of measured spectra from at least two zones, comparing the plurality of measured spectra with a reference spectrum to evaluate the thickness of each of the at least two zones of the substrate, comparing a thickness of a first zone with a thickness of a second zone, determining whether the thickness of the first zone falls within a predetermined range of the thickness of the second zone, and if the thickness does not fall within the predetermined range, at least one of a) adjusting at least one parameter of the first set and polishing a second substrate on the first platen using the adjusted parameters, or b) adjusting at least one parameter of a second set and polishing the substrate on a second platen using the adjusted parameters.

Methods of using optical metrology for feed back and feed forward process control

A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of the first set of parameters based on the difference, and polishing the second substrate on the first platen using the adjusted parameter.

Using optical metrology for wafer to wafer feed back process control

Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

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Cupertino, CA, United States of America

Zhize Zhu