Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Sony Corporation

Sony Group Corporation

Zhiyuan Lin

Xin Guo

Wei Chen

Yinhu Huang

Binbin Cao

Jun Ma

Bo Bai

Ling Han

Wenlong Wang

Zhixiang Zou

Liang Lin

Jin Sima

The present disclosure is related to an electronic device and communication method for non-orthogonal-resource based multiple access. An electronic device on a transmitting side in a communication system comprises a processing circuitry configured to determine information on codebook for non-orthogonal-resource based multiple access over a set of transmission resources, and interleave a plurality of occupied elements of at least two codewords of the same user equipment on the set of transmission resources, so as to reduce a correlation among a plurality of user equipments during the non-orthogonal-resource based multiple access.

Electronic device and communication method for non-orthogonal-resource based multiple access

The present disclosure provides electronic device and method for interleaved multiple access communication. An electronic device for an interleaved multiple access control terminal comprises a processing circuit, which is configured to acquire information about interleaved multiple access communication between a receiving apparatus and a transmitting apparatus; determine configuration parameters for the transmitting apparatus based on the information, the configuration parameters comprising operation parameters of an interleaver of the transmitting apparatus, the interleaver being used to distinguish the transmitting apparatus from other transmitting apparatus; and provide the determined configuration parameters to the transmitting apparatus, so that the transmitting apparatus is configured with the transmitting parameters for communicating with the receiving apparatus.

Electronic device and method for interleave division multiple access communication

The present invention discloses a carrying device, a wet etching apparatus and a usage method thereof. The carrying device comprises a carrying body and a heating unit both disposed under a to-be-processed substrate, the carrying body is used for carrying the to-be-processed substrate such that the to-be-processed substrate is placed inclined; the heating unit is used for heating the to-be-processed substrate, such that temperature of the to-be-processed substrate rises gradually from a top portion to a bottom portion thereof. In the technical solution of the present invention, by disposing the heating unit under the to-be-processed substrate, the temperature of the to-be-processed substrate rises gradually from the top portion to the bottom portion thereof, thus etch rate of the etchant on the bottom portion of the to-be-processed substrate can be increased, and uniformity of etch rate in the inclined wet etching process is improved.

Carrying device, wet etching apparatus and usage method thereof

The embodiments of the present invention provide an OLED array substrate, a method for manufacturing the OLED array substrate, and a touch display device. The OLED array substrate includes a first metal layer pattern, a transparent conductive layer pattern, an insulating layer pattern disposed between the first metal layer pattern and the transparent conductive layer pattern. The first metal layer pattern includes a metal bridge line. The transparent conductive layer pattern includes an anode of an OLED, a plurality of first electrodes extending in a first direction and a plurality of second electrodes extending in a second direction. Each of the first electrodes includes a plurality of first sub-electrodes, and each of the first sub-electrodes is electrically connected to a corresponding metal bridge line.

OLED array substrate, manufacturing method thereof and touch display device

A preparation method of a conductive via hole structure, a preparation method of an array substrate and a preparation method of a display device, the preparation method of the array substrate includes: forming a first metal layer () including the first metal structure (), forming a non-metallic film including a first part corresponding to the first metal structure () and an organic insulating film (') in sequence; patterning the organic insulating film (&#x2032;) to form a first organic insulating layer via hole () corresponding to the first part; then baking to form an organic insulating layer (); and then, removing the first part of the non-metallic film to form a non-metallic layer and expose the part of the surface () of the first metal structure (). This method can avoid the metal structure from being seriously oxidized.

Preparation method of conductive via hole structure, array substrate and display device

The present invention discloses a conductive structure, a method of manufacturing the conductive structure, and an array substrate. The method of manufacturing the conductive structure, comprising steps of: Forming a barrier metal film and a copper metal film in this order on a substrate, wherein the copper metal film being laminated on the barrier metal film; forming a preset photoresist pattern on the copper metal film; etching the barrier metal film and the copper metal film; oxidizing an exposed sidewall of the etched barrier metal film and an exposed sidewall of the etched copper metal film, so as to generate metal oxide layers on the exposed sidewall of the etched barrier metal film and the exposed sidewall of the etched copper metal film, respectively; and stripping off the photoresist pattern by means of a photoresist stripping liquid. In the method of manufacturing the conductive structure according to embodiments of the present invention, the exposed sidewall of the conductive structure is oxidized to generate a uniform metal oxidization layer on the exposed sidewall before removing the photoresist from the conductive structure by a wet stripping process. In this way, it can effectively prevent the interfaces between the copper metal film and the barrier metal film from being separated during performing the wet stripping process.

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Beijing, China

Zhiyuan Lin