Peking University

Zhuhai Juntian Electronic Technology Co., Ltd.

Zhiyuan Fu

Ru Huang

Qianqian Huang

Kaifeng Wang

Guangcai Liang

Yunfeng Wang

Disclosed is an embedded semiconductor random access memory structure, including a hafnium oxide-based ferroelectric storage element suitable for storing information, and a tunneling field effect transistor connected to the storage element. The tunneling field effect transistor is suitable for controlling the hafnium oxide-based ferroelectric storage element to perform read and write operations. A semiconductor memory array can be formed by repeating the above memory structures. A control method for the memory structure includes steps of writing 0, writing 1, reading, and writing back.

Embedded semiconductor random access memory structure and control method therefor

Disclosed are a method and an apparatus for detecting macro viruses. The method includes: if a data file processing program has already performed an opening operation on a target data file but has not yet performed a loading operation on a content of the target data file, calling a macro virus detecting module registered previously as a plug-in of the data file processing program; detecting the target data file by using the macro virus detecting module. Applying the embodiment of the present disclosure, the macro virus detecting module may identify the format of all data files and may perform the internal analysis of the data files, thus improving the coverage of the detected data files.

Method and apparatus for detecting macro viruses

Growing community of inventors

Beijing, China

Zhiyuan Fu