Xidian University

Zhiyu Lin

Dong Wang

Yue Hao

Jincheng Zhang

Jing Ning

Zhibin Chen

The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively. The gallium nitrate thin film according to an embodiment comprises the following structures in order from bottom to top: a substrate (), a graphene layer (), an aluminum nitride nucleation layer () fabricated by using a magnetron sputtering method, an aluminum nitride transition layer () grown by MOCVD, and a first and a second gallium nitrate layer () having different V-III ratios.

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Xi'an, China

Zhiyu Lin