Hewlett-packard Development Company, L.p.

Hewlett Packard Enterprise Development LP

Other

Zhiyong Li

Shih-Yuan Wang

Richard Stanley Williams

Alexandre M Bratkovski

Wei Guang Wu

Steven J Barcelo

Min Hu

Huei Pei Kuo

Fung Suong Ou

Gary A Gibson

Ansoon Kim

Ning Ge

Jianhua Yang

Zhang-Lin Zhou

Michael Josef Stuke

Philip John Kuekes

M Saif Islam

Wei E Wu

Duncan R Stewart

Jingjing Li

David A Fattal

William M Tong

John Paul Strachan

Theodore I Kamins

Mineo Yamakawa

Miao Hu

Raymond G Beausoleil

Sean Xiao-An Zhang

Michael Renne Ty Tan

Yong Qin Chen

Minxian Max Zhang

Zhaoning Yu

Lars Helge Thylen

Jing Tang

Warren Bruce Jackson

Lihua Zhao

James William Stasiak

James Elmer Abbott, Jr

Devin Alexander Mourey

Qiangfei Xia

Dmitri Borisovich Strukov

Shih-Yuan (sy) Wang

Jason Blackstock

Warren J Robinett

Douglas Ohlberg

Geoffrey Martin Lyon

Kyung Min Kim

Brian C Samuels

Sivapackia Ganapathiappan

John P Franz

Tahir Cader

Manish Sharma

Charles Santori

Michael R Tan

Janice H Nickel

Peter George Hartwell

Michael R T Tan

Patricia A Beck

Zhen Peng

Nobuhiko P Kobayashi

Sean Spillane

Wei Yi

Kevin Dooley

Leong Yap Chia

Wai Mun Wong

Duncan J Stewart

Gun Young Jung

Farzad Parvaresh

Ekaterina Viktorovna Ponizovskaya

Wei Wu

Ivan Naumov

Huel Pei Kuo

Katy Samuels

Logeeswaran V Jayaraman

Max Zhang

Bryan L Jackson

Shih Yuang Wang

Raymond G Beausoieil

Lu Zhang

R Stanley Williams

Stanley Williams

An example device in accordance with an aspect of the present disclosure includes an active oxide layer to form and dissipate a conductive bridge. The conductive bridge is to dissipate spontaneously within a relaxation time to enable the memory device to self-refresh according to volatile behavior in response to the input voltage being below a threshold corresponding to disregarding sneak current and noise of a crossbar array in which the memory device is to operate. The conductive bridge is to persist beyond the relaxation time to enable the memory device to retain programming for neuromorphic computing training according to non-volatile behavior of the memory device in response to the input voltage not being below the threshold.

Memory devices with volatile and non-volatile behavior

Provided in one example is an analyte detection package that includes a chamber, a surface-enhanced luminescence analyte stage within the chamber, and a lens integrated as part of the package to focus radiation onto the analyte stage.

Analyte detection package with integrated lens

In one example, a structure for surface enhanced Raman spectroscopy includes a cluster of metal nanoparticles in a hole.

Structures for surface enhanced Raman

A technique includes providing a first set of values to a memristor crossbar array and using the memristor crossbar array to perform a Fourier transformation. Using the memristor crossbar array to perform the Fourier transform includes using the array to apply a Discrete Fourier Transform (DFT) to the first set of values to provide a second set of values.

Memristor crossbar array for performing a fourier transformation

In one example, an analyte detection package includes a substrate, surface-enhanced luminescence (SEL) structures extending from the substrate and a low wettability housing. The SEL structures have a first wettability for a given liquid. The low wettability housing extends from the substrate to form a chamber between the housing of the substrate about the SEL structures to receive an analyte containing solution. The housing has an inner surface adjacent the chamber, wherein the inner surface has a second wettability for the given liquid less than the first wettability.

Analyte detection package housing

Examples herein relate to linear transformation accelerators. An example linear transformation accelerator may include a crossbar array programmed to calculate a linear transformation. The crossbar array has a plurality of words lines, a plurality of bit lines, and a memory cell coupled between each unique combination of one word line and one bit line, where the memory cells are programmed according to a linear transformation matrix. The plurality of word lines are to receive an input vector, and the plurality of bit lines are to output an output vector representing a linear transformation of the input vector.

Linear transformation accelerators

Devices to detect a substance and methods of producing such a device are disclosed. An example device to detect a substance includes a housing defining a first chamber and a substrate coupled to the housing. The substrate includes nanostructures positioned within the first chamber. The nanostructures are to react to the substance when exposed thereto. The device includes a first heater positioned within the first chamber. The heater is to heat at least a portion of the substance to ready the device for analysis.

Devices to detect a substance and methods of producing such a device

Molecule sensing apparatus. The apparatus has first and second chambers, an input port extending into the first chamber, a fluid channel extending from the first chamber to the second chamber, and a surface-enhanced substrate in the second chamber.

Gas-phase delivery system for molecule sensing apparatus

A crossbar array, comprises a plurality of row lines, a plurality of column lines intersecting the plurality of row lines at a plurality of intersections, and a plurality of junctions coupled between the plurality of row lines and the plurality of column lines at a portion of the plurality of intersections. Each junction comprises a resistive memory element, and the junctions are positioned to calculate a matrix multiplication of a first matrix and a second matrix.

Crossbar arrays for calculating matrix multiplication

Example implementations of the present disclosure relate to improved computational accuracy in a crossbar array. An example system may include a crossbar array, having a plurality of memory elements at junctions, usable in performance of computations. The example system may further include a calculate engine to calculate ideal conductance of memory elements at a plurality of junctions of the crossbar array and a determine engine to determine conductance of the memory elements at the plurality of junctions of the crossbar array. An adjust engine of the example system may be used to adjust conductance of at least one memory element to improve computational accuracy by reduction of a difference between the ideal conductance and the determined conductance of the at least one memory element.

Computational accuracy in a crossbar array

Provided in one example is an analyte detection apparatus that includes surface enhanced luminescence (SEL) structure. A dielectric layer underlies the SEL structure. An electric field generating base underlies the dielectric layer. The electric field generating base is to apply an electric field about the SEL structures to attract charged ions to the SEL structures.

Surface enhanced luminescence electric field generating base

A crossbar array, comprises a plurality of row lines, a plurality of column lines intersecting the plurality of row lines at a plurality of intersections, a plurality of junctions coupled between the plurality of row lines and the plurality of column lines at a portion of the plurality of intersections, and a plurality of diagonal control lines coupled to the plurality of junctions. Each junction comprises a resistive memory element and a transistor, and the junctions are positioned to calculate a matrix multiplication of a first matrix and a second matrix.

A method for forming a surface-enhanced fluorescence spectroscopy (SEFS) apparatus may include depositing a plurality of surface-enhanced spectroscopy (SES) elements onto respective tips of a plurality of nano-fingers, wherein the nano-fingers are arranged in sufficiently close proximities to each other to enable the tips of a group of adjacent nano-fingers to come into sufficiently close proximities to each other to enable the SES elements on the tips to trap fluorescent probe molecules that are to bind with target molecules when the nano-fingers are partially collapsed.

Surface enhanced fluorescence spectroscopy apparatus

Examples herein relate to detecting a coolant leak. For example, a system includes a nanosensor coupled to an airflow channel in a server. The nanosensor provides a resistance measurement to a controller. The system includes the controller coupled to the nanosensor. The controller detects the coolant leak based on the resistance measurement from the nanosensor.

Coolant leak detection based on a nanosensor resistance measurement

A system includes an illumination source, a detector and a processor. The detector acquires spectral measurements of a sample under test under at least one varying condition. The processor processes the measurements to generate at least one spectral representation that includes Raman spectra and at least one spectral representation that includes non-Raman spectra.

Multiple spectral measurement acquisition apparatus and the methods of using same

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Redwood City, CA, United States of America

Zhiyong Li