Shenzhen China Star Optoelectronics Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Santak Electronic (shenzhen) Co., Ltd.

Zhiwu Wang

David Zheng

Zhongyong Xu

Yusong Ding

Zhiwei Liao

The present application provides a micro light emitting diode (LED) display panel and a transfer printing method of a micro LED. The micro LED display panel includes micro LED strips arranged on a driving substrate. Each micro LED strip includes at least two micro LEDs. The micro LEDs are electrically connected to thin film transistors (TFTs) through bottom electrodes of the driving substrate. By having a light shielding layer on the driving substrate, the present application solves problems like light leakage and color mixing of the display panel.

Micro LED display panel and transfer printing method of micro LED

The present invention provides a display panel and a manufacturing method thereof. The display panel comprises a micro light emitting diode and a thin film transistor electrically coupled to the micro light emitting diode. The micro light emitting diode comprises a P type semiconductor and a N type semiconductor. The P type semiconductor is close to the thin film transistor and the N type semiconductor is configured at one side of the P type semiconductor away from the thin film transistor. One surface of the N type semiconductor away from the P type semiconductor is roughened by a plasma surface treatment process. Since a thickness of the N type semiconductor is larger than a thickness of the P type semiconductor, the crystal quality of material of the N type semiconductor will not be affected as the N type semiconductor is roughened to increase the light efficiency.

Display panel, manufacturing method thereof and display device

The present disclosure provides a thin film transistor and a method of preparing the same. The thin film transistor includes a substrate; a gate provided on the substrate; a gate insulating layer provided on the substrate and completely covering the gate; a semiconductor layer provided on the gate insulating layer; and an etch stop layer and a source/drain electrode layer provided on the semiconductor layer. The etch stop layer includes a first stop layer provided on a side of the channel region, the side being away from the gate, and a second stop layer provided on the first stop layer. The thin film transistor and the method for preparing the same as proposed in the present disclosure can prevent the device from being damaged by a high temperature and reduce the film-forming time and increase productivity; the SiOcan be prepared at a lower temperature.

Thin film transistor having etch stop multi-layer and method of preparing the same

A Micro LED display panel and manufacturing method thereof are provided. The method of manufacturing Micro LED display panel, comprising providing a TFT substrate and opening a channel on the top of TFT substrate for exposing a source or a drain inside; preparing a planar layer on the top of the TFT substrate; opening a countersink hole on the planar layer; preparing a bottom electrode in the countersink hole and the channel; transferring a Micro LED chip to the bottom electrode; preparing a first passivation layer and totally covering the first passivation layer on the surface of the planar layer; opening a via hole on the surface of the first passivation layer for exposing the Micro LED chip; preparing a top electrode in the via hole.

Micro LED display panel and manufacturing method thereof

An array substrate includes a substrate, a gate electrode, a gate insulating layer and an active layer formed in sequence in a stack. The active layer includes a source transfer portion and a drain transfer portion separated from the source transfer portion and a channel integrally connected to the source transfer portion and the drain transfer portion. Contact resistances between the source transfer portion, the drain transfer portion and the channel are reduced, and interface defects of the channel are reduced, so that through the source transfer portion and the drain transfer portion, an on-state current of a thin film transistor is increased and an off-state current is reduced so that is the on/off ratio is raised to improve the performance of the array substrate.

Array substrate having source and drain transfer portions integrated with channel and liquid crystal display panel including same

The present invention provides a bidirectional DC-DC converter. The bidirectional DC-DC converter includes a first switching tube connected in antiparallel to a first diode; a second switching tube connected in antiparallel to a second diode; a third switching tube connected in antiparallel to a third diode; a fourth switching tube connected in antiparallel to a fourth diode; and a first inductor and a second inductor, where an anode of the first diode and a cathode of the second diode are connected to form a first node, an anode of the second diode and a cathode of the third diode are connected to a neutral point, an anode of the third diode and a cathode of the fourth diode are connected to form a second node, and one end of the first inductor and one end of the second inductor are respectively connected to the first node and the second node. The bidirectional DC-DC converter in the present invention has high conversion efficiency.

Bidirectional DC-DC converter

The present application discloses an array substrate, a liquid crystal display panel and method of manufacturing the array substrate, the array substrate includes a substrate, a gate electrode, a gate insulating layer and an active layer formed in stack subsequently; the active layer includes a source transfer portion and a drain transfer portion isolated from the source transfer portion and a channel integrally connected to the source transfer portion and the drain transfer portion, the contact resistance between the source transfer portion, the drain transfer portion and the channel is reduced, the interface defects in the channel is reduced, so that the on-state current is increased, and the off-state current is reduced through the source transfer portion and the drain transfer portion of the thin film transistor of the liquid crystal display panel, that is the on/off ratio is raised to improve the performance of the array substrate.

Method for manufacturing array substrate having source and drain transfer portions integrated with channel

The present disclosure relates to an array substrate and the manufacturing method thereof, and a display panel. The array substrate includes a substrate and a plurality of thin film transistors (TFTs). The TFT includes a gate, a gate insulation layer, a trench layer, an etch stop layer (ESL), a source, and a drain. The gate insulation layer is arranged between the gate and the trench layer to insulate the gate from the trench layer, the source. The drain and the ESL are respectively arranged on the trench layer. The ESL is arranged between the source and the drain. The ESL is an aluminum nitride (AlN) film. In this way, the quality of the TFTs may be guaranteed, and the speed of the film formation of the ESL may be enhanced.

Array substrates and the manufacturing method thereof, and display panels of enhanced speed of film formation

The present invention discloses a method for inspecting sealability of a vacuum chamber. The vacuum chamber has a closed site in which two sealing rings are arranged in such a way that the two sealing rings form therebetween a sealed compartment. The sealed compartment has a wall in which an evacuation hole is formed. The method for inspecting sealability of a vacuum chamber includes: connecting an evacuation valve through a pipe to the evacuation hole to form evacuation piping; mounting a pressure meter to the evacuation piping; opening the evacuation valve to proceed with evacuation of the sealed compartment and, during the evacuation process, monitoring the pressure meter; and determining sealability of the two sealing rings according to a reading of the pressure meter. The present invention allows for quick evacuation of the sealed compartment and to determine the sealability of the two sealing rings according to the pressure meter.

Growing community of inventors

Guangdong, China

Zhiwu Wang