Yangtze Memory Technologies Co., Ltd.

ZhiWu Tang

Li Hong Xiao

Zhenyu Lu

Yushi Hu

Qian Tao

Yu Ting Zhou

Xiaowang Dai

Zhao Hui Tang

Mei Lan Guo

Qianbing Xu

Qinxiang Wei

Sha Sha Liu

Jian Hua Sun

EnBo Wang

Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.

Through array contact (TAC) for three-dimensional memory devices

Growing community of inventors

Hubei, China

ZhiWu Tang