L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

American Air Liquide, Inc.

Air Liquide Electronics U.S. LP

Natural Polymer International Corporation

Air Liquide Advanced Materials, Inc.

Zhiwen Wan

Jean-Marc Girard

Antonio Sanchez

Guillaume Husson

Sean Kerrigan

Ziyun Wang

Peng Zhang

Gennadiy Itov

Manish Khandelwal

Glenn Kuchenbeiser

Matthew Damien Stephens

Reno Pesaresi

Yang Wang

Cole Ritter

David Orban

Nicolas Blasco

Grigory Nikiforov

Jooho Lee

Andrey V Korolev

Claudia Fafard

Raphael Rochat

Santiago Marques-Gonzalez

Yumin Liu

Clément Lansalot-Matras

Ashutosh Misra

Feng Li

Jun Hao

Rocio Alejandra Arteaga Muller

Stefan Wiese

Naoto Noda

Lei Wang

Naohisa Nakagawa

Takio Kizu

Rocio Arteaga

Bin Sui

Ashulosh Misra

Methods for forming a Si-containing film on a substrate comprise heating the substrate to a temperature higher than S50° C., exposing the substrate to a vapor including a Si-containing film forming composition containing a Si-containing precursor having the formula: SiRR(NH—SiR'), wherein x=2, 3, 4; y=0, 1, 2, Rand Reach are independently selected from H, a halogen (Cl, Br, I), an C-Calkyl, an isocyanate, a C-Calkoxide, or an —NRRgroup in which Rand Reach are independently selected from H, a C-Calkyl, provided that if R═H, R>C; each R′ is independently selected from H, a halogen (Cl, Br, I), or a C-Calkyl, and depositing the Si-containing precursor onto the substrate to form the Si-containing film on the substrate through an ALD process. The Si-containing precursor may be selected from SiH(NH—Si(CH)), SiHCl(NH—Si(CH)), SiCl(NH—Si(CH)), SiH(NH—Si(CH)), SiCl(NH—Si(CH)), or Si(NH—Si(CH)).

Precursors and processes for deposition of Si-containing films using ALD at temperature of 550° C. or higher

Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N&#x2014;H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N&#x2014;H free repeating units having the formula [&#x2014;N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Perhydropolysilazane compositions and methods for forming oxide films using same

Solid or liquid N&#x2014;H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [&#x2014;N(SiH)(SiH&#x2014;)], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

N&#x2014;H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications

Disclosed are methods of using Group 4 transition metal azatrane precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Methods for vapor deposition of group 4 transition metal-containing films using Group 4 transition metal-containing films forming compositions

Pet treat

Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide

N&#x2014;H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications

Disclosed are methods of selectively synthesizing inorganic silanes, such as halosilane and dihalosilane, comprising the step of reacting the halide or halogen (i.e., HX or Xwherein X is Cl, Br, or I) with RSiH, wherein R is an unsaturated C4 to C8 cyclic hydrocarbon or heterocycle group, provided that a C6 cyclic aromatic includes at least one hydrocarbyl ligand, in the presence of a catalyst, to produce RH and the inorganic silane having the formula SiHX, wherein x=1-4; a=1-9; b=1-9; and a+b=2x+2.

Synthesis methods for halosilanes

Si(OEt)[CH&#x2014;Si(OEt)]compounds are synthesized by reacting a Grignard reagent having the formula Si(OEt)(CHMgCl) with a quenching agent having the formula Si(OEt)Cl.

Synthesis method for carbosilanes

A SiH[CH&#x2014;Si(OEt)]carbosilane compound is synthesized by reacting a Grignard reagent having the formula Si(OEt)(CHMgCl) with a quenching agent having the formula SiHCl.

Synthesis methods for carbosilanes

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Plano, TX, United States of America

Zhiwen Wan