Disco Corporation

Zhiwen Chen

Youngsuk Kim

Shunsuke Teranishi

Akihito Kawai

Teppei Nomura

Kyosuke Kobinata

Satoshi Kobayashi

Nobuyuki Kimura

Yuki Ikku

Kota Fukaya

Chae Yong

An inspection method includes applying a laser beam to a semiconductor chip to reflow a bump disposed on a surface of the semiconductor chip and included in an irradiation range of the workpiece, the laser beam being applied from an opposite surface of the semiconductor chip, capturing an image of the irradiation range with use of a thermal camera while the laser beam is applied to the semiconductor chip, and acquiring temperature information regarding the semiconductor chip from the captured image, storing in advance reference temperature information that represents temperature information obtained when the semiconductor chip and the board have normally been bonded to each other by the laser beam applied thereto, and determining whether or not the semiconductor chip and the board have normally been bonded to each other by the laser beam applied thereto, on the basis of the reference temperature information and the temperature information.

Inspection method

A laminated device wafer forming method includes a laminating step of laminating a first device wafer and a second device wafer to each other, the laminating step including a position adjusting step of imaging, by an imaging unit, a first predetermined line formed on a peripheral portion on the front surface side of the first device wafer and located outside rectangular regions corresponding to devices and a second predetermined line formed on a peripheral portion on the front surface side of the second device wafer and located outside the rectangular regions corresponding to the devices, and adjusting relative positions of the first device wafer and the second device wafer by using the first predetermined line and the second predetermined line.

Laminated device wafer forming method

A method of manufacturing a layered device chip assembly includes forming first grooves in a first wafer, fixing the first wafer to a support body, grinding the first wafer to expose the first grooves, forming a first resin layer in the first grooves, simultaneously polishing the first wafer and the first resin layer to expose the first resin layer, forming second grooves in the second wafer, the second grooves having a width on the face side larger than a width of the first grooves and a width at groove bottoms that is smaller than the width on the face side of the second wafer, affixing the second wafer to the first wafer, grinding the second wafer to expose the second grooves on the reverse side thereof, forming a second resin layer in the second grooves, and dividing the first wafer and the second wafer into a plurality of assemblies.

Method of manufacturing layered device chip assembly

A method of manufacturing an LED display panel includes holding an LED wafer on a first holding unit, holding a circuit board on a second holding unit, positioning electrodes of the board at positions corresponding to electrode layers of the wafer while a face side of the board and a face side of the wafer are facing each other, joining the electrode layers and the electrodes to each other by applying a laser beam having a wavelength absorbable by a reverse side of one of the board and the wafer, to the reverse side of the one of the board and the wafer, thereby heating at least either the electrode layers or the electrodes, and breaking the buffer layers by applying a pulsed laser beam having a wavelength transmittable through a substrate of the wafer, to the buffer layers through a reverse side of the wafer.

Method of manufacturing LED display panel

A laser reflow apparatus reflows solder bumps disposed on a side of a semiconductor chip in a workpiece and included in an irradiation range on the workpiece by applying a laser beam to an opposite side of the semiconductor chip. The laser reflow apparatus includes a spatial beam modulation unit including a laser power density setting function to locally set the laser power density in the irradiation range of a laser beam emitted from a laser beam source, and an image focusing unit including an image focusing function to focus the laser beam emitted from the laser beam source and apply the focused laser beam to the irradiation range on the workpiece.

Laser reflow apparatus and laser reflow method

A conveying unit for conveying a device chip onto a predetermined electrode of a board has a chip chuck that holds under suction one surface of the device chip, a support base to which the chip chuck is fixed in an inclinable manner, and a moving unit that moves the support base, in which a fixing mechanism that fixes the chip chuck to the support base has a plurality of leaf springs extending laterally radially from the chip chuck, the plurality of leaf springs are connected to the support base in the surroundings of the chip chuck, and the plurality of leaf springs are pulled one another, so that the chip chuck is supported in air in an inclinable manner.

Die bonding for chip conveying apparatus

A wafer is divided along a plurality of division lines by applying a laser beam of such a wavelength as to be transmitted through the wafer, to form division start point modified layers along the division lines; and applying an external force to the wafer, to divide the wafer along the division lines, with the division start point modified layers as start points of division. Prior to forming the division start point modified layers on the back surface side of the wafer, the laser beam is applied at an output of not more than a first output, to form crack guide layers for guiding a crack extension direction as modified layers in the vicinity of the back surface. Thereafter the division start point modified layers are formed at positions equivalent to the positions of the crack guide layers.

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Tokyo, Japan

Zhiwen Chen