Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Other

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Zhiwei Tan

Hui Xia

Sikun Hao

Yoonsung Um

Meng Chen

Zhichao Zhou

Zhixiong Jiang

Kaili Qu

Chuwei Liang

Ting Li

Shu Jhih Chen

Ziqi Liu

Woosung Son

Lintao Liu

Haiyan Quan

Wuguang Liu

Sheng Sun

Jubin Li

The present application provides a signal amplifying circuit and a display device. In the signal amplifying circuit, a gate of a driving transistor of a first inverter is connected to an output terminal of a reset module, and thereby a potential of the gate of the driving transistor of the first inverter changes when an impedance of an optoelectronic device changes, so that a potential change of each node of the first inverter amplifies the signal. Besides, a first compensation transistor is connected between a second gate of the first driving transistor and a first output node, and the potential of the first output node precharges to the second gate of the first driving transistor to adjust a threshold voltage of the first driving transistor, thereby erasing the difference of the threshold voltages in different transistors, and solving the technical problem of bad uniformity of signals amplified by the inverter.

Signal amplifying circuit and display device

The present disclosure provides an array substrate and a display panel including the same. The array substrate includes a plurality of pixel units. Each of the pixel units includes a main pixel electrode, a sub-pixel electrode, a first thin film transistor (TFT) electrically connected to the sub-pixel electrode, a second TFT electrically connected to the first TFT, and a third TFT electrically connected to the main pixel electrode. The first TFT includes a first channel and a first semiconductor layer. The first channel includes two or more subchannels. The first semiconductor layer includes two or more semiconductor sublayers. Each of the semiconductor sublayers is disposed in a corresponding subchannel.

Array substrate and display panel

A method of manufacturing a light emitting panel, a light emitting panel, and a display device are disclosed. The method includes providing a substrate, forming a first metal layer on the substrate, performing an oxidation process to the first metal layer to form an oxide layer on the first metal layer, forming a photoresist layer on the oxide layer, patterning the photoresist layer, the oxide layer, and the substrate, and stripping a patterned photoresist layer, and sequentially forming a first passivation layer, a color resist layer, a second passivation layer, and an indium tin oxide film layer on the oxide layer.

Method of manufacturing light emitting panel, light emitting panel, and display device

A thin film transistor (TFT) and a method of manufacturing same are provided. A photoresist layer is dry-etched to form a tunnel before an active layer is formed, wherein a bottom of the tunnel is a copper trace layer. After that, two edges of the photoresist layer are aligned with two edges of the copper trace layer. Therefore, the photoresist layer won't protrude over an amorphous silicon layer to block the etching gas from etching the amorphous silicon layer. As a result, an aperture ratio of the TFT is increased, and quality of the TFT is improved. By forming an oxidation protective layer on the tunnel, the copper trace layer is prevented from being reacted with the etching gas to form a compound. Therefore, metals or compounds on the tunnel can be completely etched, and quality of the TFT is further improved.

Thin film transistor and method of manufacturing same

A thin-film transistor and a manufacturing method for the same are disclosed. The method includes steps of: depositing a first metal layer on a substrate; depositing a semiconductor material layer on the first metal layer, and using a first photolithography process to perform a patterning process to the semiconductor material layer in order to form a semiconductor active layer depositing a second metal layer on the first metal layer and the semiconductor active layer, and using a second photolithography process to perform a patterning process to the first metal layer and the second metal layer in order to obtain a first electrode, a second electrode, and a third electrode, wherein the first electrode and the second electrode are disposed at an interval, the first electrode is disposed on the substrate, the second electrode is disposed between the substrate and the semiconductor active layer, and the third electrode is disposed on the semiconductor active layer, projections of the second electrode and the third electrode on a horizontal plane are overlapped; the first electrode is formed by the first metal layer and the second metal layer. The fabrication of the first electrode, the second electrode, the third electrode, and the active layer can be completed by only two photolithography processes, which reduce process steps and reduce cost.

Thin-film transistor and manufacturing method for the same

The present disclosure discloses a manufacturing method of a thin film transistor, including: forming a gate layer on a substrate; forming a gate insulating layer on the gate layer and the substrate; forming an active layer on the gate insulating layer; and simultaneously forming a source and a drain formed on the active layer by a combination of a chemical plating method and a lift-off method. In the present disclosure, the chemical plating method is combined with the lift-off method, so that the wet-etching method is not used for forming the source and the drain, and thus the IGZO at the channel is not required to be protected by the etching-stop-layer. Therefore, while simplifying the production process, but also can reduce costs.

Thin film transistor and manufacturing method thereof

The present invention provides a manufacturing method of an array substrate and an array substrate. The manufacturing method of the array substrate according to the present invention combines the COA technology and the BOA technology, where a black matrix is first formed on a backing plate, followed by forming a top-gate TFT device on the black matrix, and finally forming a color filter layer on the TFT device, wherein the pixel electrode is directly arranged on the drain electrode and connected with the drain electrode. The manufacturing method helps enhance electrical performance of a TFT device and stability of performance, improves quality of a display panel, and, compared to an existing array substrate manufacturing method, reduces masks and operations involved. The manufacturing method is simple and helps reduce manufacturing costs. The array substrate of the present invention requires a simple manufacturing method, provides enhanced electrical performance of a TFT device and stability of performance, and improves quality of a display panel.

Array substrate and manufacturing method thereof

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Guangdong, China

Zhiwei Tan