Xiamen Changelight Co., Ltd.

Zhiwei Lin

Kaixuan Chen

Xiangjing Zhuo

Wei Jiang

Tianzu Fang

Yang Wang

Junxian Li

Yong Zhang

Gang Yao

Jichu Tong

Yingce Liu

Zhendong Wei

Qilong Wu

Xinmao Huang

Aimin Wang

Xiangwu Wang

Xingen Wu

Hongyi Zhou

Qimeng Lv

Xiaoping Li

Xiangjing Zhou

Liyan Huo

Qunxiong Deng

Yinqiao Zhang

Zhijie Ke

Zhi Wan

Bin Song

Lihe Cai

Yongtong Li

Qimeng Lyu

Gengcheng Li

Liang Chen

Hexun Cai

A light-emitting diode (LED) chip () comprises a substrate (), an epitaxial structure (), a transparent conductive layer (), a passivation protective layer (), and at least one electrode (). The epitaxial structure () is disposed on the substrate (). The transparent conductive layer () is disposed on the epitaxial structure (). The transparent conductive layer () defines one or more first through holes () that extend through the transparent conductive layer (). The passivation protective layer () is disposed on the transparent conductive layer (). The passivation protective layer () defines one or more second through holes () that extend through the passivation protective layer (). The electrode () is disposed on the passivation protective layer (). The electrode () electrically connects the transparent conductive layer () through the one or more second through holes ().

Light-emitting diode chip and method of manufacturing the same

Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.

Semiconductor wafer and method for manufacturing semiconductor wafer thereof

A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.

Semiconductor chip of light emitting diode having quantum well layer stacked on N-type gallium nitride layer

A semiconductor wafer includes a substrate (), a buffer layer () deposited on the substrate (), and an epitaxial layer () above the buffer layer (). The buffer layer () includes a plurality of semiconductor material layers () and a plurality of oxygen-doped material layers (). The semiconductor material layers () and the oxygen-doped material layers () are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers () gradually decrease along a direction from the substrate () to the epitaxial layer ().

Light-emitting diodes with buffer layers

Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.

Buffer layers having composite structures

According to at least some embodiments of the present disclosure, a method of manufacturing semiconductor wafers comprises: selectively growing a nitride buffer layer on a first surface of a patterned substrate, the patterned substrate including at least the first surface and a second surface; and growing an epitaxial layer on the nitride buffer layer, wherein a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate. The epitaxial layer does not include multiple crystal surfaces having different crystal growth directions that cause a stress at a junction interface where the crystal surfaces having the different crystal growth directions meet.

Selective growth of nitride buffer layer

A micro-LED macro transfer method, a micro-LED display device, and a method for fabricating the same are provided. In the micro-LED macro transfer method, the LED chips on an array are divided into a first plurality of LED chips and a second plurality of LED chips. An LED chip includes a first surface and a second surface. The first plurality of LED chips are configured so that their first surfaces are coupled to the first transfer substrate. The second plurality of LED chips are configured so that their second surfaces are coupled to the second transfer substrate. Accordingly, the first transfer substrate transfers the first plurality of LED chips to the first transfer substrate while the second transfer substrate transfers the second plurality of LED chips to the second transfer substrate.

Methods and display devices for micro-LED mass transfer processes

A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.

Light-emiting diode device and method of producing the same

According to at least some embodiments of the present disclosure, a light-emitting diode (LED) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.

Light-emitting diode chips with enhanced brightness

An HV-LED module having 3D light-emitting structure and a method for manufacturing the HV-LED module are disclosed. The HV-LED module has at least two stacked parts of substage LEDs that each have an independent light-emitting structure and are bonded in a staggered pattern, and the substage LEDs are connected in series to form the 3D light-emitting structure, thereby significantly increasing light-emitting power per unit area, downsizing a high-voltage chip module using it by nearly two times, and effectively reducing packaging costs for the HV-LED module.

HV-LED module having 3D light-emitting structure and manufacturing method thereof

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Xiamen, China

Zhiwei Lin