Motorola Corporation

Zhirong Tang

Jenny M Ford

Heemyong Park

John W Steele

An n-channel device ( ) and a p-channel device ( ) are formed from a single epitaxial silicon layer ( ). During the deposition of the single epitaxial silicon layer ( ), dopants are added to the epitaxial reaction chamber and subsequently changed to define a drain region ( ), a channel region ( ), and a source region ( ). The dopant concentration is modified during the formation of the channel region ( ) to create a doping profile ( ). The doping profile ( ) has a first profile ( ) that is constant and a second profile ( ) that changes.

Method of manufacturing vertical semiconductor device

An n-channel device (10) and a p-channel device (11) are formed from a single epitaxial silicon layer (60,61). During the deposition of the single epitaxial silicon layer (60,61), dopants are added to the epitaxial reaction chamber and subsequently changed to define a drain region (24,33), a channel region (27,34), and a source region (30,35). The dopant concentration is modified during the formation of the channel region (27,34) to create a doping profile (50). The doping profile (50) has a first profile (51) that is constant and a second profile (52) that changes.

Vertical semiconductor device and method of manufacturing the same

Vertical semiconductor device

A heterojunction bipolar transistor (HBT) (30) is formed to have a germanium composition profile (46) in a base region (32) that improves the tolerance of the HBT device (30) to manufacturing variations and reduces the sensitivity to emitter/base biases. A first region (40) of essentially constant germanium composition is formed at the interface of an emitter region (34) and the base region (32). The germanium composition profile (46) also has a second region (41) in which the germanium composition is increased linearly to provide an acceleration field by reducing the band gap in this second region (41). The acceleration field reduces the transit time of carriers and increases the frequency response of the HBT device (30).

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Phoenix, AZ, United States of America

Zhirong Tang