Hangzhou Dianzi University

Hangzhou Dianzi University Fuyang Electronic Information Research Institute Co., Ltd.

Hdu Fuyang Electronic Information Research Institute Co., Ltd.

Zhiqun Cheng

Zhen Wang

Peng Gao

Ruoyu He

Guohua Liu

Chao Le

Zhihua Dong

Hui Liu

Jian Li

Jingyu Zhao

Jiangong Ni

Xiaona Xue

Yejiang Lin

Zhigang Zhou

Huajie Ke

Shiqi Li

Dou Pei

Songye Wang

Xiebin Huang

Yelong Jian

Ze Qin

It is provided a high-linearity GaN HEMT radio frequency power device for improving a transconductance under a large signal, including a substrate layer, a buffer layer, a second barrier layer, a channel layer, a first barrier layer, and a protection layer arranged in sequence. A source, a gate, and a drain are arranged on the protection layer. A first two-dimensional electron gas and a second two-dimensional electron gas are respectively formed between the channel layer and the first barrier layer and between the channel layer and the second barrier layer. The source, the gate, and the drain are configured to receive an external control signal to control motion of electrons in the first two-dimensional electron gas and the second two-dimensional electron gas formed by the channel layer. In case of the large signal, electrons in the second two-dimensional electron gas flow into the first two-dimensional electron gas.

High-linearity GaN HEMT radio frequency power device for improving transconductance under large signal

An unmanned aerial vehicle (UAV) identification method based on blind source separation and deep learning is disclosed, in the method, firstly, the one-dimensional radar cross section millimeter wave data set of the UAV is acquired, and the mixed signal is obtained by mixing, and the improved FastICA algorithm is used to separate it. Secondly, the separated signal is converted into a two-dimensional image by data transformation, and the two-dimensional image is augmented, the obtained data set is divided into training set, validation set and test set. Thirdly, establish a UAV classification model based on Improved ResNet18 and train this model on the training set to achieve UAV classification. In the present invention, the training time of the network is not greatly increased while the network identification accuracy is improved, so that it can well complete the UAV type identification, and the design is more reasonable and effective.

Unmanned aerial vehicle identification method based on blind source separation and deep learning

The present disclosure provides a reconfigurable power amplifier (PA) based on a PIN switch and a design method thereof. The reconfigurable PA based on a PIN switch includes an input port, an input matching circuit, the PIN switch, a gate bias circuit, a transistor, a drain bias circuit, an output matching circuit and an output port, where the input matching network includes an input end connected to a power input end, and an output end connected to a gate of the transistor, the gate bias circuit is connected in parallel with the gate, the drain bias circuit is connected in parallel with a drain, the drain of the transistor is connected to an input end of the output matching circuit, and an output end of the output matching circuit serves as a power output.

Reconfigurable power amplifier based on pin switch and design method thereof

An impedance matching method for a low-profile ultra-wideband array antenna is provided. The method includes: connecting an arm of a balanced end of a hyperbolic microstrip balun in series with an open circuit line; directly coupling the open circuit line to a radiator layer; connecting another arm of the balanced end of the hyperbolic microstrip balun to the radiator layer via a metallized via hole, and welding an unbalanced end of the hyperbolic microstrip balun to a coaxial line, so that the coaxial line feeds a power to the antenna via the hyperbolic microstrip balun. In this method, the open circuit line is integrated between the hyperbolic microstrip balun and the radiator layer of the antenna to achieve an impedance matching of the ultra-wideband antenna and to simplify a structure of a matching circuit.

Impedance matching method for low-profile ultra-wideband array antenna

A microstrip ultra-wideband antenna is provided, including: an upper dielectric substrate, a radiation patch, an open-circuit line, a short-circuit line, a ground plane, a lower dielectric substrate, a vertical dielectric substrate, isolation walls, a hyperbolic microstrip balun feeder and an ideal wave port. The radiation patch is attached to a lower surface of the upper dielectric substrate; the ground plane is attached to an upper surface of the lower dielectric substrate; the short-circuit line and the open-circuit line are attached to a rear surface and a front surface of the vertical dielectric substrate respectively; the hyperbolic microstrip balun feeder is attached to the front and rear surface of the vertical dielectric substrate; the isolation walls are located between the upper dielectric substrate and the lower dielectric substrate perpendicularly to an end of the radiation patch; and the ideal wave port is provided below the hyperbolic microstrip balun feeder.

Microstrip ultra-wideband antenna

The present disclosure provides a multi-band base station antenna for scattering suppression, including a high-band dual-polarized antenna and a low-band dual-polarized antenna. The operating band of the high-band dual-polarized antenna is 1.7-3.0 GHz, which are four; the operating band of the low-band dual-polarized antenna operates is 0.69-0.96 GHz, and is comprised of two intersected dipoles; above the high-band dual-polarized antennas, a spacing between the high-band dual-polarized antenna and the low-band dual-polarized antenna is smaller than the quarter wavelength corresponding to the low-band dual-polarized antenna; the low-band dual-polarized antenna is provided with several rectangular open slots at equal spacings, with symmetrical openings on both sides of the dipole, with a width of 1-1.5 mm and a length of 4-to 6 mm; and a ratio of the sum of widths of the open slots to a length of an arm of the dipole is greater than 0.16 and less than 0.24.

Multi-band base station antenna for scattering suppression

An enhancement-mode III-V HEMT based on an all-solid-state battery is provided. In which, a second semiconductor layer and a first semiconductor layer are sequentially formed on a substrate, and a heterostructure is formed between the second semiconductor layer and the first semiconductor layer; a source electrode is electrically connected to a drain electrode through a 2DEG generated in the heterostructure; a gate electrode is used to control on-off of the 2DEG in the heterostructure; and an all-solid-state battery is arranged between the source electrode and the gate electrode, is composed of at least one group of battery units connected in series or connected in series and parallel, and is used to deplete the 2DEG in a corresponding region of the heterostructure.

Enhancement-mode III-V HEMT based on all-solid-state battery

Disclosed is a novel III-V heterojunction field effect transistor comprising a substrate layer, a first semiconductor layer, a second semiconductor layer, a drain electrode, a source electrode, a gate electrode, a first dielectric layer, second dielectric layers and the like, wherein the first semiconductor layer has a greater bandgap compared with the second semiconductor layer, and the second semiconductor layer and the first semiconductor layer are combined to form a heterostructure. The thickness of the first semiconductor layer is not greater than the critical thickness of two-dimensional electron gas formed in a heterojunction channel, and thus natural 2DEG in the heterojunction channel is depleted. The novel III-V heterojunction field effect transistor has the advantages of being simple in structure, simple in preparation process, stable in performance, high in reliability and the like.

III-V heterojunction field effect transistor

Growing community of inventors

Hangzhou, China

Zhiqun Cheng