Intel Corporatino

Zhiqiang Xie

Jun Liu

Gordon A Haller

Hongbin Zhu

Fei Wang

Wei Yeeng Ng

Jun Zhao

Wesley O McKinsey

Jeremy F Adams

Mark A Levan

Conductive structure technology is disclosed. In one example, a conductive structure can include an interconnect and a plurality of conductive layers overlying the interconnect. Each conductive layer can be separated from an adjacent conductive layer by an insulative layer. In addition, the conductive structure can include a contact extending through the plurality of conductive layers to the interconnect. The contact can be electrically coupled to the interconnect and insulated from the plurality of conductive layers. Associated systems and methods are also disclosed.

Solid state memory device, and manufacturing method thereof

Growing community of inventors

Meridian, UM, United States of America

Zhiqiang Xie