Yangtze Memory Technologies Co., Ltd.

Huawei Technologies Co., Limited

Wuhan Memsonics Technologies Co., Ltd.

Zhipeng Wu

Lu Zhang

Kai Han

Bo Xu

Feng Liu

Chong Zhu

Hang Yin

Chuan Yang

Yali Guo

Simin Liu

Liuqun Xie

Zi Yin

Wei Xu

Lei Wang

Lei Xue

ZongLiang Huo

Jingjing Geng

Xiangning Wang

Wei Zhu

Meng Xiao

Chengliang Sun

Binghui Lin

Pan Wang

Hui Zhang

Haoran Wu

Yu Zhou

Bohao Hu

Shiyao Hu

Yuan Yuan

A method includes forming a stack of alternating insulating layers and sacrificial layers over a substrate; forming a trench through the stack to uncover the substrate to expose lateral sides of the insulating layers and the sacrificial layers, the trench extending from a core area to a stair step area of the stack; forming a liner to cover the exposed lateral sides; removing the liner in the trenches within a first area of the core area and the stair step area to expose the lateral sides of the sacrificial layers of the stack within the first area; removing the sacrificial layers within the first area; removing the liner in the trenches within a second area of the core area and the stair step area to expose the lateral sides of the sacrificial layers of the stack within the second area; and removing the sacrificial layers within the second area.

Method for removing sacrificial layers of a stack of a three-dimensional semiconductor structure in two steps

A packet sending method includes, when a network element in a serial network receives a to-be-forwarded packet at a previous node from a previous network element, and when the network element needs to send a to-be-sent packet at a current node, determining whether the to-be-sent packet at the current node and the to-be-forwarded packet at the previous node can be superimposed, where the network element is an intermediate network element in the serial network; when the to-be-sent packet at the current node and the to-be-forwarded packet at the previous node can be superimposed, superimposing the to-be-sent packet at the current node and the to-be-forwarded packet at the previous node, to obtain a to-be-forwarded packet at the current node; and sending the to-be-forwarded packet at the current node to a next network element of the network element.

Network structure and method for sending/receiving packet between network elements in network

Some embodiments include a first electronic device that automatically sends a first search request and a second search request. The first search request is used in a search for an electronic device having a first projection receiving capability related to a first projection protocol, and the second search request is used in a search for an electronic device having a second projection receiving capability related to a second projection protocol. In some embodiments the first electronic device receives a first feedback message or a second feedback message, or any combination thereof, from a second electronic device, and the first electronic device automatically displays, in response to the first feedback message, the second feedback message, the first identity related to the second electronic device.

First electronic device, second electronic device, and projection processing method

A data transmission method and a device are provided. When determining that the first network element and the second network element is disconnected, the first network element stores identification information of the last frame of data and connection status information that are transmitted before the connection is disconnected. When determining a condition for re-communication is meet, the first network element generates a third key based on a first key and a second key, where the first key is a key used to transmit the last frame of data, and the second key includes a key used by the first network element and the second network element to transmit each of j frames of data before the last frame of data. The first network element communicates with the second network element based on the third key, identification information of an iframe of data, and the connection status information.

Data transmission method and device

In an embodiment a screen projection method includes determining, by a project end, to-be-projected data when a screen projection function is enabled, obtaining, by the project end, first data permission of the project end for the to-be-projected data and second data permission of a receive end for the to-be-projected data when the to-be-projected data is media data and projecting, by the project end, the to-be-projected data onto the receive end in a screen mirroring manner when the first data permission is higher than the second data permission or projecting, by the project end, the to-be-projected data onto the receive end in a digital living network alliance manner when the first data permission is lower than the second data permission.

Screen projection method and apparatus, and project end

Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Method of forming top select gate trenches

A plurality of holes are formed extending vertically in a first dielectric deck that includes interleaved a plurality of first sacrificial layers and a plurality of first dielectric layers over a substrate. A plurality of sacrificial structures are formed in the holes. A second dielectric deck is formed having interleaved a plurality of second sacrificial layers and a plurality of second dielectric layers over the first dielectric deck. A slit opening is formed extending in the second dielectric deck, the slit opening aligned with and over the sacrificial source contact structures. The sacrificial structures are removed through the slit openings such that the slit opening is in contact with the holes to form a slit structure. A plurality of conductor layers are formed in the first and second dielectric decks through the slit structure, forming a memory stack. A source contact structure is formed in the slit structure.

Three-dimensional memory device having adjoined source contact structures and methods for forming the same

A piezoelectric microphone, includes: a wafer substrate including a cavity; a plurality of cantilever beams with a piezoelectric deck structure; a fixed column; a plurality of flexible elastic members; and a connecting section. The plurality of cantilever beams each includes a fixed end and a free end suspended above the cavity. The plurality of cantilever beams is of a structure in which one end is narrow and the other end is wide, and the fixed end is relatively narrow. The fixed column is disposed at the center of the bottom surface of the cavity. The fixed ends of the plurality of cantilever beams are all connected to the top surface of the fixed column. A gap is provided between every two adjacent cantilever beams. The plurality of flexible elastic members is connected to free ends of two adjacent cantilever beams to enable the cantilever beams to vibrate synchronously.

High-sensitivity piezoelectric microphone

A memory device includes a staircase region and an array region, along a first lateral direction; a wall structure in the staircase region; and a first separation structure in the array region and arranged along the first lateral direction with the wall structure. The wall structure includes dielectric pairs of a first dielectric layer and a second dielectric layer stacked in the staircase region. The first separation structure is vertically through a stack structure in the array region. The stack structure includes pairs of the first dielectric layer and an electrode layer.

Memory device and fabrication method thereof

Embodiments of structure and methods for forming a memory device are provided. In an example, a memory device includes a substrate, a stack above the substrate, a channel structure, and a source contact structure each extending vertically through the memory stack. The source contact structure includes (i) a plurality of first source contact portions each extending vertically and laterally separated from one another and (ii) a second source contact portion extending vertically over and in contact with the plurality of first source contact portions, the second source contact portion being laterally continuous.

A memory device includes a substrate; and a stack structure, including alternately arranged first dielectric layers and electrode layers. In a first lateral direction, the memory device includes array regions and a staircase region arranged between array regions. In a second lateral direction, the stack structure includes a first block and a second block, each including a wall-structure region and extending along the first lateral direction. The wall-structure regions of the first block and the second block are adjacent to each other and together form a wall structure in the staircase region. The memory device also includes a first separation structure, formed through the stack structure and positioned between the first block and the second block in array regions along the first lateral direction; and second dielectric layers positioned between the first block and the second block in the staircase region, and alternated with the first dielectric layers.

Growing community of inventors

Wuhan, China

Zhipeng Wu