Agency for Science, Technology and Research

Wuhan Memsonics Technologies Co., Ltd.

Zhipeng Ding

Yan Liu

Jinghui Xu

Bowoon Soon

Sunil Wickramanayaka

Vivek Chidambaram

Chao Gu

Bangtao Chen

Binghui Lin

Liyan Siow

Qin Ren

Li Yan Siow

Weiliang Teo

The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved. The first supporting part is matched with the second organic material layer to form a second acoustic reflection structure, so that when part of acoustic waves are not reflected back by the first acoustic reflection structure and are transmitted to the second acoustic reflection structure, the acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is further reduced, and the performance of the acoustic device is improved.

Packaging structure and method of acoustic device

A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.

Method for low temperature bonding of wafers

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Zhipeng Ding