Samsung Electronics Co., Ltd.

Formosa Plastics Corporation, U.s.a.

Zhiming Wang

Craig Allen Breen

Chih-Jian Chen

Guangxue Xu

Wenhao Liu

Annie Cho Won

Peter M Allen

Jonathan S Steckel

Honglan Lu

Justin Wade Kamplain

Chunming Wang

Whitney Miller

Charles Hamilton

Catherine Mauck

A Ziegler-Natta catalyzed ethylene/alpha-olefins copolymer is provided having sporadic long chain branches and reversed comonomer composition distribution or short chain branching distribution (SCBD) in the high molecular weight fractions. According to the invention, polyethylene film made with the inventive copolymer has a balance of improved physical, optical, mechanical properties as well as processability. In one aspect, the film includes a 1% secant modulus of greater than 25,000 psi, a film haze of less than 10, a film clarity of greater than 90, a dart impart resistance of greater than 500 g/mil, and a MD tear strength of greater than 500 g/mil.

Ethylene/alpha-olefin copolymers for better optical and mechanical properties and processability of film made therefrom

The present invention relates to a process for the (co)polymerization of olefins to make polyethylene (co)polymers having sporadic long chain branches in high molecular weight fractions and a high molecular weight tail along with reversed comonomer composition distribution for improving processability, melt strength and optical properties. Such polyethylene (co)polymers have been prepared with a process comprising the reaction of at least the following components: (a) an advanced Ziegler-Natta catalyst precursor comprising titanium; (b) an activator comprising organohalogenous aluminum compounds; (c) ethylene; and (d) one or more alpha-olefins.

Process for making polyethylene copolymers with a reversed comonomer distribution

A semiconductor nanocrystal that emits green light having a peak emission with a full width at half maximum of about 30 nm or less at 100&#xb0; C. and a method of making coated semiconductor nanocrystals are provided. Materials and other products including semiconductor nanocrystals described herein and materials and other products including semiconductor nanocrystals prepared by a method described herein are also disclosed.

Semiconductor nanocrystals, method for coating semiconductor nanocrystals, and products including same

A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion.

Methods of preparation of semiconductor nanocrystals group IIIA and group VA elements

Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same

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Port Lavaca, TX, United States of America

Zhiming Wang