Advanced Micro-fabrication Equipment Inc. China

National Nanotechnology Star(shanghai) Development Co., Ltd

ZhiLin Huang

Jian Ding

Chao Luo

Tuqiang Q Ni

XinYe Tu

A method for continuously preparing nano zinc oxide using carbon dioxide. The method includes: step 1, determining experimental materials and experimental instruments; step 2, preparing a raw material and processing the raw material; step 3, oxidizing the preprocessed emulsified zinc slurry; step 4, carbonizing the zinc-free emulsified zinc slurry; step 5, filtering and washing; and step 6, drying and calcining. By using carbon dioxide as a transformation precipitant and using the carbonization method to prepare industrial by-products such as zinc slurry into alkaline zinc carbonate, the nano zinc oxide is obtained through liquid removal, impurity removal, drying, and calcination. Compared with traditional nano zinc oxide preparation methods, the method has a simple and green process flow, a wide source of raw materials, and can prepare nano zinc oxide products with different purities and particle sizes.

Method for continuously preparing nano zinc oxide using carbon dioxide

The present invention relates to a device of changing the gas flow pattern in the process chamber and a wafer processing method and system; a gas introduced from the gas inlet to the process chamber will process the wafer in the process chamber; a gas center ring is set in the process chamber to adjust the gas flow pattern, which includes a fixed component under the gas inlet and above the wafer, and a movable ring could locate in the first position or the second position respectively; when the movable ring is in the first position, the gas is delivered downwards to the wafer via the first opening set on the fixed component; when the movable ring is in the second position, the gas is delivered downwards to the wafer via the second opening set on the movable ring. The present invention constitutes the gas center ring by different combinations of fixed component and movable component, to change the gas flow pattern in the process chamber, achieving effective control on the wafer processing effects and to dispense with opening the process chamber during the adjustment process of gas center ring.

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Shanghai, China

ZhiLin Huang