Chinese Academy of Sciences

Imago Biosciences, Inc.

Zhihua Li

John Michael McCall

Arthur Glenn Romero

He Zhao

Wenwu Wang

Yan Yang

Cassandra Celatka

Amy E Tapper

Elisabeth C A Brot

Jian-Xie Chen

Xuemei Chen

Xiaoming Liao

Toni Chancellor

Betina Biolatto

A method for integrating a surface-electrode ion trap and a silicon optoelectronic device, and an integrated structure. A silicon structure and a grating are formed on a wafer. A first dielectric layer, a second dielectric layer, a third dielectric layer, and a fourth dielectric layer are sequentially deposited above the wafer. An epitaxy opening is provided in the first dielectric layer to form single-photon avalanche detectors. First contacts vias connecting the detectors, and through silicon vias reaching a back surface of the wafer, are provided in the second dielectric layer and the third dielectric layer, respectively. Electrodes, the second contact vias and the third contact vias are provided in the fourth dielectric layer. The first contact vias are connected to a first electrode via the second contact vias, and the through silicon vias are connected to the first electrode and a second electrode via the third contact vias.

Method for integrating surface-electrode ion trap and silicon photoelectronic device, integrated structure, and three-dimensional structure

Provided in this disclosure are methods for the synthesis of substituted 2-arylcyclopropylamines and 2-heteroarylcyclopropylamines and related compounds. Also provided are methods for reduction of thioesters to aldehydes, and methods for reductive animation of cyclopropylamines.

Methods and processes for the preparation of KDM1A inhibitors

Growing community of inventors

Beijing, China

Zhihua Li