Polyera Corporation

Flexterra, Inc.

Basf Se Corporation

Northwestern University

Raynergy Tek Inc.

Zhihua Chen

Antonio Facchetti

He Yan

Tobin Jay Marks

Hualong Pan

Marcel Kastler

Florian Doetz

Yan Zheng

Shaofeng Lu

Yu Xia

Hakan Usta

Mark Seger

Timothy Chiu

Silke Annika Koehler

Jordan R Quinn

Christopher Newman

Jennifer E Brown

Atsuro Takai

Martin Drees

Subramanian Vaidyanathan

Chuang-Yi Liao

Darwin Scott Bull

Hui Huang

Tobin J Marks

Huei Shuan Phoebe Tan

Joshua Lee Ayers

Florian Dötz

Chung-Wen Ko

Yu Xua

Silke Koehler

Jordan Quinn

This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.

Thin-film transistor comprising organic semiconductor materials

Disclosed are low-temperature thermally and/or ultraviolet light curable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such low-temperature thermally and/or ultraviolet light curable polymers. In some embodiments, the device can include a passivation layer prepared from the low-temperature thermally and/or ultraviolet light curable polymers described herein. In certain embodiments, a polymer of the disclosure has a repeating unit having the structure (I) in which Q-Qand Q-Qare each independently &#x2014;C(H)&#x2550;C(H)&#x2014; or (II) in which each n is independently selected from 1, 2, 3 and 4, and the polymer includes at least one repeating unit of Formula (I) wherein Q-Qand Q-Qis (II).

Organic dielectric materials and devices including them

The present teachings relate to novel polymeric materials for electrode treatment. The present polymeric electrode modifiers can be derived from an episulfide monomer via either an acid-catalyzed ring-opening polymerization reaction or a nucleophilic polymerization reaction.

Polymeric electrode modifiers

The present invention relates to new semiconducting compounds having at least one optionally substituted benzo[d][1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Molecular and polymeric semiconductors and related devices

The present invention relates to new semiconducting compounds having at least one optionally substituted dithieno[1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Dithiophenethiadiazole semiconductors and related devices

The present invention relates to new semiconducting compounds having at least one optionally substituted azino[1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Azinothiadiazole compounds and related semiconductor devices

The present invention relates to new semiconducting compounds having at least one optionally substituted thienothiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Thienothiadiazole compounds and related semiconductor devices

The present teachings relate to new semiconducting polymers including an optionally substituted naphtho[1,2-d:5,6-d]bis[1,2,3]thiadiazole moiety, an optionally substituted naphtho[2,1-d:6,5-d]bis[1,2,3]thiadiazole moiety, or a chalcogen analog thereof. The present polymers can be used to prepare thin film semiconductor components which can be incorporated into various electronic, optical, and optoelectronic devices.

Polymeric semiconductors and related devices

The present teachings relate to polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds generally include as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other pi-conjugated unit. The annulated TVT unit can be represented by the formula: where Cyand Cycan be a five- or six-membered carbocyclic ring. The annulated TVT unit can be optionally substituted at any available ring atom(s), and can be covalently linked to the other pi-conjugated unit via either the thiophene rings or the carbocyclic rings Cyand Cy. The other pi-conjugated unit can be a conjugated linear linker including one or more unsaturated bonds, or a conjugated cyclic linker including one or more carbocyclic and/or heterocyclic rings.

Fused thiophene-based conjugated polymers and their use in optoelectronic devices

The present teachings relate to new semiconducting compounds including one or more moieties represented by formula (I): wherein X is a chalcogen; and one or more linear conjugated moieties and/or one or more cyclic conjugated moieties other than the moieties represented by formula (I). The present compounds can be used to prepare thin film semiconductor components which can be incorporated into various electronic, optical, and optoelectronic devices.

Semiconducting compounds and related devices

The present invention relates to all-polymer blends including an electron-acceptor polymer and an electron-donor polymer, capable of providing improved device performance, for example, as measured by power conversion efficiency, when used in photovoltaic cells.

Polymeric blends and related optoelectronic devices

Disclosed are new semiconductor materials prepared from rylene-(&#x3c0;-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Semiconductor materials prepared from rylene-(&#x3c0;-acceptor)copolymers

The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.

Perylene-based semiconductors and methods of preparation and use thereof

Disclosed are photocurable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include a dielectric layer prepared from such photocurable polymers. In some embodiments, the device can include a passivation layer prepared from the polymers described herein.

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Skokie, IL, United States of America

Zhihua Chen