Western Digital (fremont), Inc.

Tegal Corporation

Zhihong Zhang

Ming Mao

Rongfu Xiao

Guanxiong Li

Anup Roy

Shaoping Li

Gerardo Bertero

Chen-jung Chien

Yuankai Zheng

Qunwen Leng

Wei Gao

Tue H Nguyen

Michael L Mallary

Zhitao Diao

Tai Dung Nguyen

Guanghong Luo

Shihai He

Ling Wang

Miao Wang

Chen Jung Chien

Haiwen Xi

Wei Zhang

Hai Sun

Chih-Ching Hu

Steven C Rudy

Dujiang Wan

Christopher L Beaudry

Lingyun Miao

Xiaoyu Yang

Zhipeng Li

Haifeng Wang

Wencheng Su

Lijun Tong

Jianxin Fang

Yingbo Zhang

Miaoyin Wang

Ruisheng Liu

James Yuan

A method provides a magnetic transducer including a first antiferromagnetically coupled (AFC) shield, a second AFC shield and a read sensor between the first and second AFC shields. The first AFC shield includes first and second ferromagnetic layers and a first nonmagnetic spacer layer between the first and second ferromagnetic layers. The first and second ferromagnetic layers have first and second saturation magnetizations and first and second thicknesses, respectively. The second ferromagnetic layer is between the read sensor and the first ferromagnetic layer. The second AFC shield includes third and fourth ferromagnetic layers and a second nonmagnetic spacer layer between the third and fourth ferromagnetic layers. The third ferromagnetic layer is between the read sensor and the fourth ferromagnetic layer. The third and fourth ferromagnetic layers have third and saturation magnetizations and third and fourth thicknesses, respectively. The second AFC shield is a mirror image of the first AFC shield.

Method and system for providing a read transducer having symmetric antiferromagnetically coupled shields

A magnetic read apparatus includes a media-facing surface (MFS), a sensor, a shield structure, a side bias structure, and a shield reference bias structure. The sensor includes a free layer and a nonmagnetic layer. The shield structure includes a shield pinning structure and a shield reference structure between the shield pinning structure and the nonmagnetic layer. The nonmagnetic layer is between the free layer and a shield reference structure. The shield pinning structure includes a pinned moment oriented in a first direction. The shield reference structure includes a reference structure moment weakly coupled with the pinned moment. The side bias structure is adjacent to a side of the free layer and biases the free layer in a first direction parallel to the MFS. The shield reference bias structure is adjacent to the shield reference structure and biases the shield reference structure in a direction opposite to the first direction.

Free layer only magnetic reader that may have a reduced shield-to-shield spacing and a multilayer side bias

A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Magnetic read head with antiferromagentic layer

A magnetic read apparatus has a media-facing surface (MFS) and includes a read sensor, a magnetic bias structure and an insulating layer. The read sensor has a side, a front occupying part of the MFS and a back. The read sensor includes a free layer, a pinned layer and a barrier layer between the free and pinned layers. The barrier layer has a barrier layer coefficient of thermal expansion. The magnetic bias structure is adjacent to the side of the free layer. The insulating layer includes first and second portions. The first portion of the insulating layer is between the read sensor side and the magnetic bias structure. The second portion of the insulating layer adjoins the read sensor back. The insulating layer has an insulating layer coefficient of thermal expansion that is at least &#x2153; of and not more than 5/3 of the barrier layer coefficient of thermal expansion.

Read sensor having an insulating layer capable of use in two-dimensional magnetic recording

Tunnel magnetoresistance read head with narrow shield-to-shield spacing

Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.

Method for making ultra-narrow read sensor and read transducer device resulting therefrom

Method of manufacturing a magnetic read head

A method and system provide a substantially seamless interface in a magnetic transducer. The magnetic recording transducer includes a first layer and a second layer on the first layer. The second layer is different from the first layer. The first layer consists of at least one material. The method includes removing at least the second layer using a first removal process. A residue of the second layer and a first portion of the first layer remain after the first removal process. A first sacrificial layer consists of the at least one material on the first portion of the first layer. At least the first sacrificial layer is removed using a second removal process. A second portion of the first layer remains after completion of the second removal process. An additional structure is provided. The seamless interface is between the second portion of the first layer and the additional structure.

Method and system for providing a read transducer having seamless interfaces

A read sensor for a transducer is fabricated. The transducer has a field region and a sensor region corresponding to the sensor. A sensor stack is deposited. A hybrid mask including hard and field masks is provided. The hard mask includes a sensor portion covering the sensor region and a field portion covering the field region. The field mask covers the field portion of the hard mask. The field mask exposes the sensor portion of the hard mask and part of the sensor stack between the sensor and field regions. The sensor is defined from the sensor stack in a track width direction. Hard bias layer(s) are deposited. Part of the hard bias layer(s) resides on the field mask. Part of the hard bias layer(s) adjoining the sensor region is sealed. The field mask is lifted off. The transducer is planarized.

Method for fabricating a read sensor for a read transducer

A method of forming an energy assisted magnetic recording (EAMR) writer is disclosed. A structure comprising a bottom cladding layer and a near field transducer (NFT) is provided. A patterned sacrificial layer is formed over the structure. A top cladding layer is deposited over the patterned sacrificial layer and a remaining region of the structure not covered by the patterned sacrificial layer. A patterned resist is formed over the top cladding layer. A first etching operation is performed on the top cladding layer via the patterned resist, whereby a top cladding having a sloped region is formed. The patterned sacrificial layer provides an etch stop for the first etching operation.

Method of forming a dielectric slope for EAMR and magnetic writer

A method for protecting an organic polymer underlayer during a plasma assisted process of depositing a subsequent film on the organic polymer underlayer is disclosed. The method provides the deposition of a protective continuous layer using organic polymer damage-free technique in order to not damage the organic polymer underlayer and to protect the organic polymer underlayer during the plasma assisted process of depositing a subsequent film. The organic polymer damage-free technique is a non-plasma process, using only thermal energy and chemical reactions to deposit the continuous layer. The organic polymer damage-free technique can also be a plasma assisted process using a reduced plasma power low enough in order to not damage the organic polymer underlayer. This method is applicable to many organic polymer underlayers such as organic polymer is aromatic hydrocarbon, polytetrafluoroehtylene (PTFE), parylene, benzocyclobutene-based polymers (BCB), polyimide, fluorinated polyimide, fluorocarbon-based polymers, poly(arylene ether)-based polymers (PAE), cyclohexanone-based polymers, and to many plasma assisted deposition processes such as plasma enhanced CVD deposition, plasma enhanced ALD deposition and plasma enhanced NLD deposition of silicon dioxide, silicon nitride, nitrided diffusion barrier such as TiN, TaN, WN, TiSiN, TaSiN, WSiN.

Method to plasma deposit on organic polymer dielectric film

A method for improving the adhesion of an impermeable film on a porous low-k dielectric film in an interconnect structure is disclosed. The method provides an in-situ annealing step before the deposition of the impermeable film to release the volatile trapped molecules such as water, alcohol, HCl, and HF vapor, inside the pores of the porous low-k dielectric film. The method also provides an in-situ deposition step of the impermeable film right after the deposition of the porous low dielectric film without exposure to an atmosphere containing trappable molecules. The method further provides an in-situ deposition step of the impermeable film right after the removal a portion of the porous low-k dielectric film without exposure to an atmosphere containing trappable molecules. By the removal of all trapped molecules inside the porous low-k dielectric film, the adhesion between the deposited impermeable film and the low-k dielectric film is improved. This method is applicable to many porous low-k dielectric films such as porous hydrosilsesquioxane or porous methyl silsesquioxane, porous silica structures such as aerogel, low temperature deposited silicon carbon films, low temperature deposited Si&#x2014;O&#x2014;C films and methyl doped porous silica.

Method to deposit an impermeable film on porous low-k dielectric film

Growing community of inventors

Fremont, CA, United States of America

Zhihong Zhang