International Business Machines Corporation

Purdue Research Foundation

University of Florida Research Foundation, Incorporated

Other

Zhihong Chen

Shu-Jen Han

Aaron Daniel Franklin

Alberto Valdes Garcia

Siyuranga O Koswatta

George Stojan Tulevski

Andrew Gabriel Rinzler

James Bowler Hannon

Dechao Guo

Edward William Kiewra

Alessandro Cesare Callegari

Katherina E Babich

Yanning Sun

Kai Zhao

Sumeet Kumar Gupta

Chun-Li Lo

Sandeep Krishna Thirumala

Yi-Tse Hung

Katherine Lynn Saenger

Shengjiao Zhang

Sunny Chugh

Ruchit Mehta

A method of providing a barrier to diffusion of metal into a dielectric in a metal interconnect arrangement is disclosed which includes forming a damascene trench, including forming a dielectric base, with a trench made therein, depositing one or more two dimensional diffusion barrier layers formed over the trench, depositing a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base, wherein each of the one or more two-dimensional diffusion barrier layers is a polycrystalline material selected from the group consisting of TaSe, TaTe, TiS, TiSe, TiTe, and TaS, and wherein x is between 1.5-1.9.

Ultra-thin diffusion barrier

A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

Valley spin hall effect based non-volatile memory

The invention provide novel pyrimidine derivatives and analogs having inhibitory activities towards certain tyrosine kinases, e.g., Bruton's tyrosine kinase (Btk) and/or Focal adhesion kinase (FAK), extracellular signal-regulated kinase (ERK), pharmaceutical compositions thereof, and methods of treatment, reduction or prevention of certain diseases or conditions mediated by such by tyrosine kinases, e.g., cancers, tumors, fibrosis, inflammatory diseases, autoimmune diseases, diabetes, or immunologically mediated diseases.

Substituted pyrimidines, pharmaceutical compositions and therapeutic methods thereof

A metal interconnect arrangement in an integrated circuit, includes a damascene trench which includes a dielectric base, with a trench made therein, one or more two dimensional diffusion barrier layers formed over the trench, a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base.

A memory cell is disclosed which includes a conductive layer, an insulating layer disposed atop the conducting layer, a semiconductor layer disposed atop the insulating layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another and wherein the semiconductor layer extends beyond the first and second electrodes forming a first wing, a third electrode coupled to the conductive layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.

Quantum capacitance graphene varactors and fabrication methods

A method of growing graphene at low temperature on a substrate. The method includes placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a carbon precursor gas to the PECVD chamber, generating plasma at between about 350&#xb0; C. and about 800&#xb0; C. to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer and enabling a plurality of the carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer, removing carbon atoms from top of the cobalt layer, and removing the cobalt layer.

Graphene production using plasma-enhanced chemical vapor deposition

A graphene deposition process. The process includes the steps of placing a substrate into a deposition chamber and heating the chamber, generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate.

Plasma-enhanced chemical vapor deposition methods for graphene deposition

An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer graphene layer formed on the first dielectric layer. The first dielectric layer provides a substantially flat surface on which the channel is formed. A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer. Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer. The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer.

Growing community of inventors

Valhalla, NY, United States of America

Zhihong Chen