Lsi Logic Corporation

Maxim Integrated Products, Inc.

Lsi Corporation

Zhihai Wang

Wilbur G Catabay

Nicole Dorene Kerness

Arkadii V Samoilov

Joy T Jones

Wei-Jen Hsia

Joe W Zhao

Ping Li

Stanley Barnett

Kiran Kumar

Shiqun Gu

Prashanth S Holenarsipur

Richard D Schinella

Wai Lo

Weidan Li

Hong Lin

Prabhakar Pati Tripathi

Shouli Steve Hsia

Jiunn-Yann Tsai

Fred Chen

Kai Zhang

Wen-Chin Stanley Yeh

Mei Zhu

Stephanie A Yoshikawa

Yen-Hui Joseph Ku

Rudy Rios

Wilbur G Gatabay

Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.

Light sensor having a contiguous IR suppression filter and transparent substrate

Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate and configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a glass substrate. The light sensor also includes a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer. The light sensor further includes through-silicon vias to provide electrical interconnections between different conductive layers.

Light sensor having transparent substrate and through-substrate vias and a contiguous IR suppression filter

A light sensor is described that includes a glass substrate having a diffuser formed therein and at least one color filter integrated on-chip (i.e., integrated on the die of the light sensor). In one or more implementations, the light sensor comprises a semiconductor device (e.g., a die) that includes a semiconductor substrate. At least one photodetector (e.g., photodiode, phototransistor, etc.) is formed in the substrate proximate to the surface of the substrate. The color filter is configured to filter light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to the photodetector. A glass substrate is positioned over the substrate and includes a diffuser. The diffuser is configured to diffuse light incident on the diffuser and to pass the diffused light to the at least one color filter for further filtering.

Light sensor having transparent substrate and diffuser formed therein

Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.

Light sensor having transparent substrate with lens formed therein

Techniques are described to furnish a light sensor that includes a patterned IR interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR interference filter configured to block infrared light is disposed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors.

Light sensor having IR cut interference filter with color filter integrated on-chip

A light sensor is described that includes an IR interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are disposed proximate to the surface of the substrate. An IR interference filter is disposed over the photodetectors. The IR interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photo detectors.

Light sensor having IR cut and color pass interference filter integrated on-chip

Light sensor having a contiguous IR suppression filter and a transparent substrate

Light sensor having a transparent substrate, a contiguous IR suppression filter and through-substrate vias

A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photodetectors.

Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.

Embodiments of the invention include a method for forming a copper interconnect having a bi-layer copper barrier layer. The method comprises the steps of providing a substrate with a low-K dielectric insulating layer and an opening in the insulating layer. A first barrier layer of tantalum/tantalum nitride is formed on the insulating layer and in the opening. A second barrier layer consisting of a material selected from the group of palladium, chromium, tantalum, magnesium, and molybdenum is formed on the first barrier layer. A copper seed layer is formed on the second barrier layer and implanted with barrier ions and a bulk copper layer is formed on the seed layer. The substrate is annealed and subject to further processing which can include planarization.

Multi-step process for forming a barrier film for use in copper layer formation

An improvement to a method of forming an integrated circuit. An etch stop layer is formed to overlie the front end processing layers of the integrated circuit. Support structures are formed that are disposed so as to support electrically conductive interconnects on various levels of the integrated circuit. Substantially all of the non electrically conductive layers above the etch stop layer that were formed during the fabrication of the interconnects are removed.

Interconnect dielectric tuning

Growing community of inventors

Sunnyvale, CA, United States of America

Zhihai Wang