Chinese Academy of Sciences

Huaneng Clean Energy Research Institute

Zhiguo Zhao

Huilong Zhu

Huaxiang Yin

Ping Xiao

Chao Dong

Shisen Xu

Dongming Zhao

Yongkui Zhang

Mengjie Li

Zhiyong Lu

Yun Zhang

Jiguang Xiong

Jialiang Liu

Xiaojun Qin

Xueling Wang

Ruwei Liu

Sichao Liang

The disclosure provides a method for preparing an electrode film layer on a surface of a solar cell substrate. The method includes: a) obtaining a metal electrode material melt by heating and melting a metal electrode material under a vacuum condition; b) bombarding the metal electrode material melt with an ion source at low energy, so that it is sputtered and deposited on the surface of the solar cell substrate to form the electrode film layer; in which the energy of low energy bombarding is 30 eV to 80 eV.

Method for preparing electrode film layer on surface of solar cell substrate

A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Beijing, China

Zhiguo Zhao