International Business Machines Corporation

Samsung Electronics Co., Ltd.

Chartered Semiconductor Manufacturing Ltd (corporation)

Zhiguo Sun

Lawrence Alfred Clevenger

Yun Yu Wang

Griselda Bonilla

Roger Allan Quon

Yiheng Xu

Stephan Grunow

Chao-Kun Hu

Hyeok-sang Oh

Tien Cheng

Wei-tsui Tseng

Interconnect structures comprising capping layers with low dielectric constants and good oxygen barrier properties and methods of making the same are provided. In one embodiment, the integrated circuit structure comprises: an interlevel dielectric layer disposed above a semiconductor substrate; a conductive interconnect embedded in the interlevel dielectric layer; a first capping layer comprising SiCNHdisposed upon the conductive interconnect; a second capping layer comprising SiCNH(has less N) having a dielectric constant less than about 4 disposed upon the first capping layer; and a third capping layer comprising SiCNHdisposed upon the second capping layer, wherein a+b+c+d=1.0 and a, b, c, and d are each greater than 0 and less than 1, and wherein w+x+y+z=1.0 and w, x, y, and z are each greater than 0 and less than 1.

Interconnect structures comprising capping layers with low dielectric constants and methods of making the same

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Beacon, NY, United States of America

Zhiguo Sun