Micron Technology Incorporated

Texas Instruments Corporation

Zhigiang (Jeff) Wu

Tongbi T Jiang

Randhir P Thakur

Alan R Reinberg

Kirk D Prall

Li Li

Thomas Arthur Figura

Majid Movahed Mansoori

Methods are presented, in which an oxide protection layer is provided on a gate structure for protection against poly mushrooming during selective epitaxial silicon deposition in fabricating elevated or recessed source transistors. In one implementation, the protection layer is constructed by depositing silicon germanium over a gate polysilicon layer prior to gate patterning, and oxidizing the device to form a silicon germanium oxide over the gate polysilicon. The protection layer is then removed following selective epitaxial deposition.

Method for preventing polysilicon mushrooming during selective epitaxial processing

A high-resolution pressure-sensing device is disclosed. The device includes an insulating flexible matrix having a plurality of filler particles. Application of a force to the matrix causes compression of the matrix. This results in the filler particles occupying a greater amount of space within the matrix relative to when no force is applied. A detector attached to the matrix detects or measures the volume of the filler particles relative to the volume of the matrix, and therefore determines the force applied to the matrix. Preferably, the resistivity of the matrix is inversely proportional to the volume percent of the filler particles, in which case the detector is a resistance measuring circuit.

High resolution pressure-sensing device having an insulating flexible matrix loaded with filler particles

A high-resolution pressure-sensing device is disclosed. The device includes an insulating flexible matrix having a plurality of filler particles. Application of a force to the matrix causes compression of the matrix. This results in the filler particles occupying a greater amount of space within the matrix relative to when no force is applied. A detector attached to the matrix detects or measures the volume of the filler particles relative to the volume of the matrix, and therefore determines the force applied to the matrix. Preferably, the resistivity of the matrix is inversely proportional to the volume percent of the filler particles, in which case the detector is a resistance-measuring circuit.

The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.

Reduced leakage DRAM storage unit

A method of forming silicon storage nodes on silicon substrates, wherein the silicon storage nodes have a roughened surface, which does not result in deposition of silicon atoms over the entire surface of the silicon substrate and which does not require the silicon storage nodes to be comprised of amorphous silicon prior to being subjected to the surface-roughening treatment.

Selective method to form roughened silicon

A socket device for receiving a connection pin is disclosed, the socket device including a substrate having an upper surface. The socket device includes a connection pad disposed on the upper surface and a first layer disposed on the upper surface and on the connection pad. The first layer includes material having an overall positive coefficient of thermal expansion. The socket device includes a second layer disposed on the first layer. The second layer includes material having an overall negative coefficient of thermal expansion. The socket device also includes a contact hole formed in the first and second layers exposing a portion of the connection pad.

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Meridian, ID, United States of America

Zhigiang (Jeff) Wu