Hunan Sanan Semiconductor Co., Ltd.

Xiamen Sanan Integrated Circuit Co., Ltd.

Zhigao Peng

Yonghong Tao

Zhidong Lin

Wenbi Cai

Lijun Li

Yuanxu Guo

A silicon carbide power diode device has a silicon carbide substrate on which a silicon carbide epitaxial layer with an active region is provided. A Schottky metal layer is on the active region, and a first electrode layer is on the Schottky metal layer. A first ohmic contact is on the silicon carbide substrate, and a second electrode layer is on the first ohmic contact. The active region of the silicon carbide epitaxial layer has a plurality of first P-type regions, a plurality of second P-type regions, and N-type regions. The first P-type regions and the second P-type regions lacking an ohmic contact are spaced apart with dimensions of the second P-type regions being minimized and the N-type regions being maximized for given dimensions of the first P-type region. Second ohmic contacts are located between the first P-type region and the Schottky metal layer.

Silicon carbide power diode device and fabrication method thereof

A semiconductor device includes a semiconductor substrate, an epitaxial layer disposed on the semiconductor substrate, a cell zone including multiple unit cells disposed in the epitaxial layer opposite to the semiconductor substrate, a transition zone having a doped region and surrounding the cell zone, a source electrode unit disposed on the epitaxial layer opposite to the semiconductor substrate, and multiple gate electrode units. Each unit cell includes a well region, a source region disposed in the well region, and a well contact region extending through the source region to contact the well region. A method for manufacturing the semiconductor device is also disclosed.

Semiconductor device and method for manufacturing the same

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Xiamen, China

Zhigao Peng