Applied Materials, Inc.

Zhigang Wang

Jiao Yang

Jon Christian Farr

Alfredo Granados

Ruizhe Ren

Heng Wang

An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer () on a substrate () in an etch chamber () to form an open feature () having a bottom surface () and sidewalls in the material layer (); (b) forming a protection layer () on the sidewalls and the bottom surface () of the open feature () from a protection layer () gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer () formed on the bottom surface () of the open feature () from a bottom surface () open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer () from the bottom surface () of the open feature () until a desired depth of the open feature () is reached.

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Xi'an, China

Zhigang Wang