Hitachi-high-technologies Corporation

Zhigang Wang

Ritsuo Fukaya

Nobuhiro Okai

Michio Hatano

Hidetoshi Sato

Yasunari Sohda

Yoshinori Nakayama

Hiroki Kawada

Makoto Ezumi

Noriaki Arai

Yusuke Abe

Yoshinori Momonoi

Kazunari Asao

Hideki Itai

Masaru Matsuzaki

Koki Miyahara

Provided is a measurement device including: an irradiation optical system which emits a primary charged quantum beam to a sample for scanning; a detector which detects secondary charged particles generated from the sample; and a signal processing unit which processes an output signal from the secondary charged particle detector which has detected the secondary charged particles, in which the signal processing unit includes a measurement unit which measures widths of a first pattern group calibrated with a well-known first dimension and a second pattern group calibrated with a well-known second dimension, and an operation unit which defines a relationship between the well-known dimensions of the first and second pattern groups and length measurement values of the first and second pattern groups as a function. Accordingly, it is possible to control device performance with high accuracy, by controlling a device state so that the measured value described above is within an acceptable range by comparing to a predetermined value provided in advance.

Measurement device, calibration method of measurement device, and calibration member

In observation of a sample having a structure in its depth direction, a charged particle beam apparatus that can form an SEM image reflecting a sample shape at a desired depth by a single image acquisition while avoiding enlargement of the apparatus is provided. The apparatus has: an irradiation optical system for irradiating and scanning a charged particle beam generated from a charged particle source on the sample; a detection optical system having a detector that detects charged particles generated from the sample by the irradiation of the charged particle beam, and converts them into an electric signal at a predetermined sampling period; and an image processing unit for forming an image based on the electric signal from the detector, in which the image processing unit detects a peak of wave height values for each pixel from the electric signal at each sampling time, and forms the image based on the peak of the detected wave height values.

Charged particle beam apparatus and image forming method

The present invention aims at providing a pattern dimension measuring device that realizes the measurement of a dimension of a pattern difficult to set up a measurement box, or between patterns away from each other with high precision. In order to achieve the above object, a pattern dimension measuring device is proposed which moves a field of view with reference to a first pattern formed on the specimen on the basis of predetermined first distance information, acquires a first image, executes template matching with the use of the first image and a matching template, and calculates a distance between a second pattern included in the first image and the first pattern on the basis of second distance information obtained by the template matching, and the first distance information.

Pattern dimension measuring device, charged particle beam apparatus, and computer program

To provide a scanning electron microscope that can detect reflected electrons of any emission angle, the scanning electron microscope, which obtains an image by detecting electrons from a sample () has: a control electrode () that discriminates between secondary electrons from the sample () and reflected electrons; a secondary electron conversion electrode () that generates secondary electrons by the impact of reflected electrons; a withdrawing electrode () that withdraws those secondary electrons; an energy filter () that discriminates between the secondary electrons withdrawn and electrons reflected from the sample (); and a control calculation means () that selects a combination of voltages applied to the secondary electron conversion electrode (), the withdrawing electrode (), and energy filter ().

Scanning electron microscope

In order to solve the problem that the resolution of a back-scattered electron image without a contrast difference between materials with close atomic numbers is low, an image processing apparatus that performs an image process on a back-scattered electron image as an input image includes: a material peak detection unit that determines a peak luminance value with a peak of a frequency of a luminance histogram based on a luminance value obtained for each measurement position by using the input image as an input and information about material-dependent back-scattered electron generation efficiency, and that outputs the peak luminance value for each material; and an image information adjustment unit that emphasizes a material-dependent contrast on the basis of the input image and the peak luminance value for each material.

Image processing apparatus, image processing method

This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle () signal; and a second detection condition for detecting a reflected charged particle () signal. As a result, it is possible to correct length measurement error and scaling fluctuation arising when altering the type of charged particle to detect. Thus, in the observation, measurement, and the like of a low-step sample or a charged sample, even when forming an image that is on the basis of the reflected charged particle signal, it is possible to obtain an accurate image regardless of length measurement error and scaling fluctuation.

Charged particle beam device

A scanning electron microscope and an optical-condition setting method are provided. The optical condition allows the suppression of a lowering in the measurement and inspection accuracy caused by the influence of electrification, even if there are a large number of measurement and inspection points. A pattern on a sample is measured based on the detection of electrons by scanning the sample surface with an electron beam. A change in measurement values relative to the number of measurements is determined from the measurement values at a plurality of measurement points on the sample, and the sample-surface electric field is controlled so that the inclination of the change becomes equal to zero, or becomes close to zero.

Scanning electron microscope optical condition setting method and scanning electron microscope

An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.

Method for controlling charging of sample and scanning electron microscope

It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material. A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.

Charged particle beam irradiation system

A scanning electron microscope is disclosed. The primary electron beam is radiated on a reticle (specimen), and an observation image of the reticle is obtained using the electrons secondarily released. The microscope comprises a lamp for radiating the vacuum ultraviolet light having the wavelength of not more than 172 nm on the reticle in the atmosphere, a radiation chamber for hermetically sealing the reticle so that the vacuum ultraviolet light can be radiated on the reticle, and a specimen holder for holding the reticle in the radiation chamber and capable of adjusting the distance between the lamp and the reticle.

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Tokyo, Japan

Zhigang Wang