Acm Research (shanghai) Inc.

Zhifeng Gao

Jian Wang

Hui Wang

Zhaowei Jia

Liangzhi Xie

Yunwen Huang

Junping Wu

Sunny Voha Nuch

Yue Ma

A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5/N for each rotation of the chuck, where &#x3bb; is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5&#x3bb;n during the cleaning process, where &#x3bb; is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

Methods and apparatus for cleaning semiconductor wafers

A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise.

A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5&#x3bb;/N for each rotation of the chuck, where &#x3bb; is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5&#x3bb;n during the cleaning process, where &#x3bb; is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.

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Shanghai, China

Zhifeng Gao